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| SI1410EDH New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070 @ VGS = 4.5 V 20 0.080 @ VGS = 2.5 V 0.100 @ VGS = 1.8 V ID (A) 3.7 3.4 3.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D D 1 6 D Marking Code D 2 5 D YY AA G 3 4 S XX G Lot Traceability and Date Code Part # Code Top View S 1 kW ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS 1.4 1.56 0.81 -55 to 150 2.6 8 0.9 1.0 0.52 W _C 2.0 A Symbol VDS VGS 5 secs 20 Steady State Unit V "12 3.7 2.9 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71409 S-03185--Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W C/W 1 SI1410EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.7 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 3.4 A VGS = 1.8 V, ID = 1.7 A Forward Transconductancea gfs VSD VDS = 10 V, ID = 3.7 A IS = 1.4 A, VGS = 0 V 4 0.055 0.065 0.080 10 0.75 1.1 0.070 0.080 0.100 S V W 0.45 "1 "10 1 5 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 3.7 A 5.6 0.75 1.10 0.15 0.4 1.9 1.2 0.25 0.6 2.8 1.8 ms m 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 10 10,000 Gate Current vs. Gate-Source Voltage I GSS - Gate Current (mA) 8 I GSS - Gate Current (mA) 1,000 100 6 10 TJ = 150_C 4 1 0.1 TJ = 25_C 2 0 0 3 6 9 12 15 18 0.01 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71409 S-03185--Rev. A, 05-Mar-01 2 SI1410EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 5 thru 2 V 6 I D - Drain Current (A) I D - Drain Current (A) 1.5 V 6 TC = -55_C 125_C 4 8 25_C Vishay Siliconix Transfer Characteristics 4 2 1V 0 0 1 2 3 4 5 2 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 1000 Capacitance r DS(on) - On-Resistance ( W ) 0.12 C - Capacitance (pF) 800 0.09 VGS = 1.8 V VGS = 2.5 V 600 Ciss 0.06 VGS = 4.5 V 0.03 400 200 Coss 0.00 0.0 0 1.5 3.0 4.5 6.0 7.5 0 Crss 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.7 A 1.8 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) 4 1.6 VGS = 4.5 V ID = 3.7 A 1.4 3 1.2 2 1.0 1 0.8 0 0.0 1.5 3.0 4.5 6.0 7.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71409 S-03185--Rev. A, 05-Mar-01 www.vishay.com 3 SI1410EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.20 I S - Source Current (A) TJ = 150_C 1 TJ = 25_C 0.15 ID = 3.7 A 0.10 0.05 0.1 0 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 250 mA 35 Single Pulse Power, Junction-to-Ambient 0.1 V GS(th) Variance (V) 28 -0.0 Power (W) 21 -0.1 14 -0.2 7 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71409 S-03185--Rev. A, 05-Mar-01 SI1410EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71409 S-03185--Rev. A, 05-Mar-01 www.vishay.com 5 |
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