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| A45-1/SMA45-1 1000 TO 4000 MHz CASCADABLE AMPLIFIER * WIDE BANDWIDTH * HIGH GAIN 17.5 dB (TYP.) * LOW NOISE: 4.1 dB (TYP.) * GaAs FET DESIGN Typical Performance @ 25C Specifications (Rev. Date: 1/01)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure (max.) Power Output @ 1 dB comp. (min.) IP3 IP2 Second Order Harmonic IP VSWR Input / Output (max.) DC Current @ 15 Volts (max.) Typical 0 to 50C Guaranteed -54 to +85C 0.8-4.2 GHz 17.5 dB 0.6 dB 36 dB 4.0 dB 13.0 dBm +26 dBm +33 dBm +40 dBm 1.8:1 / 1.8:1 65 mA 1.0-4.0 GHz 16.5 dB 0.8 dB 5.0 dB 12.5 dBm 1.0-4.0 GHz 15.5 dB 1.0 dB 5.5 dB 12.0 dBm 1.9:1 / 1.9:1 75 mA 2.0:1 / 2.0:1 80 mA * Measured in a 50-ohm system at +5 Vdc Nominal. Subject to change without notice. Absolute Maximum Ratings Storage Temperature Max. Case Temperature Max. DC Voltage Max. Continuous RF Input Power Max. Short Term RF Input Power (1 minute max.) Max. Peak Power (3 sec max.) "S" Series Burn-in Temperature (Case) -65 to +125C 125C +6 Volts +13 dBm 100 mW 0.25 W 125C Thermal Data: Vcc = 15 Vdc Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 132C/W 0.171 W 23C Outline Drawings Package Figure Model TO-8 BG A45-1 Surface Mount AA SMA45-1 SMA Connectorized CE CA45-1 Specifications subject to change without notice. * North America: 1-800-366-2266 Visit www.macom.com for complete contact and product information. |
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