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| PRELIMINARY SPT165 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: * * * * * * * BVCEO 45V. Very Low Leakage. High Gain. Stable Reference Voltage 0.002%/ oC from 0 to 70oC. Isolated Case. Hermetic, Metal Case with Glass Seals. 150oC Operating Temperature. MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, TC #150oC Base or Zener Current, TC #150oC Total Device Dissipation @ TA = 25oC Derate above 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-33 4 10 mA 45 VOLTS NPN (VREF) TRANSISTOR TO-33 SYMBOL VCEO VCBO VEBO IC IB, IZ PD TJ, TSTG R2JC VALUE 45 45 3 10 6 250 2 -55 to +150 500 UNITS Volts Volts Volts mAmps mAmps mW mW/oC o C o C/W 3 1 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0010A PRELIMINARY SPT165 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage * (IC = 1.0mADC) Collector Cutoff Current (VCB = 30VDC) DC Current Gain* (IC = 500:ADC, VCE = 3VDC) Reference Voltage * (VCE = 3VDC) *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% SYMBOL BVCEO ICBO HFE VREF MIN 45 10 6.3 MAX 1 120 7.7 UNITS V :A VDC |
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