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32Kx8 Autostore nvSRAM
FEATURES
* 25, 35, 45 ns Read Access & R/W Cycle Time * Unlimited Read/Write Endurance * Automatic Non-volatile STORE on Power Loss * Non-Volatile STORE Under Hardware or Software Control * Automatic RECALL to SRAM on Power Up * Unlimited RECALL Cycles * 200K STORE Cycles * 20-Year Non-volatile Data Retention * Single 3V +20%, -10% Power Supply * Commercial, Industrial Temperatures * Small Footprint SOIC & SSOP Packages (RoHSCompliant
STK14D88
DESCRIPTION
The Simtek STK14D88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. The SRAM provides the fast access & cycle times, ease of use and unlimited read & write endurance of a normal SRAM. Data transfers automatically to the non-volatile storage cells when power loss is detected (the STORE operation). On power up, data is automatically restored to the SRAM (the RECALL operation). Both STORE and RECALL operations are also available under software control. The Simtek nvSRAM is the first monolithic non-volatile memory to offer unlimited writes and reads. It is the highest performance, most reliable non-volatile memory available.
BLOCK DIAGRAM
Quatum Trap 512 X 512 ROW DECODER STORE STATIC RAM ARRAY 512 X 512 RECALL VCC VCAP
A5 A6 A7 A8 A9 A11 A12 A13 A14
POWER CONTROL STORE/ RECALL CONTROL
HSB
SOFTWARE DETECT INPUT BUFFERS COLUMN I/O COLUMN DEC
A13 - A0
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
A0 A1 A2 A3 A4 A10
G E W
This product conforms to specifications per the terms of Simtek standard warranty. The product has completed Simtek internal qualification testing and has reached production status.
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STK14D88
VCAP A14 A12 A7 A6 A5 A4
VSS
DQ0 A3 A2 A1 A0 DQ1 DQ2
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
VCC HSB W A13 A8 A9 A11
VCAP A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
VSS
DQ6 G A10 E DQ7 DQ5 DQ4 DQ3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VCC HSB W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
32 Pin SOIC
48 Pin SSOP
Relative PCB area usage. See website for detailed package size specifications.
PIN DESCRIPTIONS
Pin Name A14-A0 DQ7-DQ0 E W G VCC HSB Input I/O Input Input Input Power Supply I/O I/O Description Address: The 15 address inputs select one of 32,768 bytes in the nvSRAM array Data: Bi-directional 8-bit data bus for accessing the nvSRAM Chip Enable: The active low E input selects the device Write Enable: The active low W enables data on the DQ pins to be written to the address location latched by the falling edge of E Output Enable: The active low G input enables the data output buffers during read cycles. De-asserting G high caused the DQ pins to tri-state. Power: 3.0V, +20%, -10% Hardware Store Busy: When low this output indicates a Store is in progress. When pulled low external to the chip, it will initiate a nonvolatile STORE operation. A weak pull up resistor keeps this pin high if not connected. (Connection Optional). Autostore Capacitor: Supplies power to nvSRAM during power loss to store data from SRAM to nonvolatile storage elements. Ground Unlabeled pins have no internal connections.
VCAP VSS (Blank)
Power Supply Power Supply No Connect
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ABSOLUTE MAXIMUM RATINGSa
Voltage on Input Relative to Ground . . . . . . . . . . . . . -0.5V to 4.1V Voltage on Input Relative to VSS . . . . . . . . . .-0.5V to (VCC + 0.5V) Voltage on DQ0-7 or HSB . . . . . . . . . . . . . . . .-0.5V to (VCC + 0.5V) Temperature under Bias. . . . . . . . . . . . . . . . . . . . . .-55C to 125C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .-55C to 140C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65C to 150C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA Package Thermal Characteristics - See Website: http://www.simtek.com
Note a: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC CHARACTERISTICS
COMMERCIAL SYMBOL ICC1 PARAMETER MIN Average VCC Current 65 55 50 70 60 55 mA mA mA MAX MIN MAX INDUSTRIAL UNITS
(VCC = 2.7V-3.6V)
NOTES
tAVAV = 25ns tAVAV = 35ns tAVAV = 45ns Dependent on output loading and cycle rate. Values obtained without output loads. All Inputs Don't Care, VCC = max Average current for duration of STORE cycle (tSTORE) W (V CC - 0.2V) All Other Inputs Cycling at CMOS Levels Dependent on output loading and cycle rate. Values obtained without output loads. All Inputs Don't Care Average current for duration of STORE cycle (tSTORE) E (VCC -0.2V) All Others VIN 0.2V or (VCC-0.2V) Standby current level after nonvolatile cycle complete VCC = max VIN = VSS to VCC VCC = max VIN = VSS to VCC, E or G VIH All Inputs All Inputs IOUT = - 2mA IOUT = 4mA
ICC2
Average VCC Current during STORE 3 Average VCC Current at tAVAV = 200ns 3V, 25C, Typical 10 10 mA 3 mA
ICC3
ICC4
Average VCAP Current during AutoStoreTM Cycle VCC Standby Current (Standby, Stable CMOS Levels)
3 3
3 3
mA
ISB
mA
IILK IOLK VIH VIL VOH VOL TA VCC VCAP NVC DATAR
Input Leakage Current Off-State Output Leakage Current Input Logic "1" Voltage Input Logic "0" Voltage Output Logic "1" Voltage Output Logic "0" Voltage Operating Temperature Operating Voltage Storage Capacitance Nonvolatile STORE operations Data Retention 0 2.7 17 200 20 2.0 VSS -0.5 2.4
1 1 VCC + 0.3 0.8 2.0 VSS -0.5 2.4 0.4 70 3.6 120 - 40 2.7 17 200 20
1 1 VCC + 0.3 0.8
A A V V V
0.4 85 3.6 120
V C V F K Years
3.3V + 0.3V Between VCAP pin and VSS, 5V rated.
@ 55 deg C
Note: The HSB pin has IOUT=-10 uA for VOH of 2.4 V, this parameter is characterized but not tested.
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AC TEST CONDITIONS
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3V Input Rise and Fall Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5ns Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1 and 2
CAPACITANCEb
SYMBOL CIN COUT PARAMETER Input Capacitance Output Capacitance
(TA = 25C, f = 1.0MHz)
MAX 7 7 UNITS pF pF CONDITIONS V = 0 to 3V V = 0 to 3V
Note b: These parameters are guaranteed but not tested.
3.0V
577 Ohms OUTPUT 789 Ohms 30 pF INCLUDING SCOPE AND FIXTURE
Figure 1: AC Output Loading
3.0V
577 Ohms OUTPUT 789 Ohms 5 pF INCLUDING SCOPE AND FIXTURE
Figure 2: AC Output Loading for Tristate Specs (tHZ, tLZ, tWLQZ, tWHQZ, tGLQX, tGHQZ)
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STK14D88
SRAM READ CYCLES #1 & #2
SYMBOLS NO. #1 1 2 3 4 5 6 7 8 9 10 11 tAXQXd tAVAVc tAVQVd #2 tELQV tAVAVc tAVQVd tGLQV tAXQXd tELQX tEHQZe tGLQX tGHQZe tELICCH
b
STK14D88-25 PARAMETER Alt. tACS tRC tAA tOE tOH tLZ tHZ tOLZ tOHZ tPA tPS Chip Enable Access Time Read Cycle Time Address Access Time Output Enable to Data Valid Output Hold after Address Change Chip Enable to Output Active Chip Disable to Output Inactive Output Enable to Output Active Output Disable to Output Inactive Chip Enable to Power Active Chip Disable to Power Standby 0 25 0 10 3 3 10 25 25 12 MIN MAX 25
STK14D88-35 MIN MAX 35 35 35 15 3 3 13 0 13 0 35
STK14D88-45 UNITS MIN MAX 45 45 45 20 3 3 15 0 15 0 45 ns ns ns ns ns ns ns ns ns ns ns
tEHICCLb
Note c: Note d: Note e: Note f:
W must be high during SRAM READ cycles. Device is continuously selected with E and G both low Measured 200mV from steady state output voltage. HSB must remain high during READ and WRITE cycles.
SRAM READ CYCLE #1: Address Controlledc,d,f
2 tAVAV ADDRESS 5 3 tAVQV
DATA VALID
tAXQX DQ (DATA OUT)
SRAM READ CYCLE #2: E Controlledc,f
2 tAVAV ADDRESS 6 1 tELQV 11 tEHICCL 7 tEHQZ
E
tELQX
G 8 tGLQX DQ (DATA OUT) tELICCH
ACTIVE
4 tGLQV
9 tGHQZ
DATA VALID
10
ICC
STANDBY
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SRAM WRITE CYCLES #1 & #2
SYMBOLS NO. #1 12 13 14 15 16 17 18 19 20 21 tAVAV tWLWH tELWH tDVWH tWHDX tAVWH tAVWL tWHAX t WLQZ
e, g
STK14D88-25 PARAMETER Alt. tWC tWP tCW tDW tDH tAW tAS tWR tWZ tOW Write Cycle Time Write Pulse Width Chip Enable to End of Write Data Set-up to End of Write Data Hold after End of Write Address Set-up to End of Write Address Set-up to Start of Write Address Hold after End of Write Write Enable to Output Disable Output Active after End of Write 3 MIN 25 20 20 10 0 20 0 0 10 MAX
STK14D88-35 MIN 35 25 25 12 0 25 0 0 13 3 MAX
STK1D88-45 UNITS MIN 45 30 30 15 0 30 0 0 15 3 MAX ns ns ns ns ns ns ns ns ns ns
#2 tAVAV tWLEH tELEH tDVEH tEHDX tAVEH tAVEL tEHAX
tWHQX
Note g: If W is low when E goes low, the outputs remain in the high-impedance state. Note h: E or W must be VIH during address transitions.
SRAM WRITE CYCLE #1: W Controlledg,h
12 tAVAV ADDRESS 14 tELWH E 17 tAVWH 13 tWLWH 15 tDVWH DATA IN tWLQZ DATA OUT
PREVIOUS DATA HIGH IMPEDANCE DATA VALID
19 tWHAX
tAVWL W
18
16 tWHDX
20
21 tWHQX
SRAM WRITE CYCLE #2: E Controlledg,h
12 tAVAV ADDRESS 18 tAVEL E 14 tELEH 19 tEHAX
17 tAVEH W
13 tWLEH 15 tDVEH 16 tEHDX
DATA VALID HIGH IMPEDANCE
DATA IN DATA OUT
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AutoStoreTM/POWER-UP RECALL
SYMBOLS NO. Standard 22 23 24 25 tHRECALL tSTORE VSWITCH VCCRISE tHLHZ Alternate Power-up RECALL Duration STORE Cycle Duration Low Voltage Trigger Level VCC Rise Time 150 PARAMETER MIN MAX 20 12.5 2.65 ms ms V s i j,k STK14D88 UNITS NOTES
Note i: tHRECALL starts from the time VCC rises above VSWITCH Note j: If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place Note k: Industrial Grade Devices require 15 ms MAX.
AutoStoreTM/POWER-UP RECALL
STORE occurs only if a SRAM write has happened. VCC 24 VSWITCH No STORE occurs without at least one SRAM write.
25 tVCCRISE
AutoStoreTM
23 tSTORE
23 tSTORE
POWER-UP RECALL
22 tHRECALL
22 tHRECALL
Read & Write Inhibited
POWER-UP RECALL
BROWN OUT TM AutoStore
POWER-UP RECALL
POWER DOWN TM AutoStore
Note: Read and Write cycles will be ignored during STORE, RECALL and while VCC is below VSWITCH
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STK14D88
SOFTWARE-CONTROLLED STORE/RECALL CYCLEl,m
Symbols NO. E Cont 26 27 28 29 30 tAVAV tAVEL tELEH tEHAX tRECALL Alternate tRC tAS tCW STORE/RECALL Initiation Cycle Time Address Set-up Time Clock Pulse Width Address Hold Time RECALL Duration PARAMETER MIN 25 0 20 1 50 MAX MIN 35 0 25 1 50 MAX MIN 45 0 30 1 50 MAX ns ns ns ns s m STK14D88-35 STK14D88-35 STK14D88-45 UNITS NOTES
Note l: The software sequence is clocked with E controlled READs Note m: The six consecutive addresses must be read in the order listed in the Mode Selection Table. W must be high during all six consecutive cycles.
SOFTWARE STORE/RECALL CYCLE: E CONTROLLEDm
26 tAVAV ADDRESS 27 tAVEL
ADDRESS #1
26 tAVAV
ADDRESS #6
E
28 tELEH
29 tEHAX
G
23 tSTORE DQ (DATA)
DATA VALID DATA VALID
/t
30
RECALL
HIGH IMPEDENCE
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STK14D88
HARDWARE STORE CYCLE
SYMBOLS PARAMETER Standard 31 1 32 2 tDELAY tHLHX Alternate tHLQZ Hardware STORE to SRAM Disabled Hardware STORE Pulse Width MIN 1 15 MAX 70 s ns n STK14D88 UNITS NOTES
Note n: Read and Write cycles in Progress before HSB is asserted are given this amount of time to complete
HARDWARE STORE CYCLE
32 tHLHX
HSB (IN)
23 tSTORE
HSB (OUT)
31 tDELAY DQ (DATA OUT)
SRAM Enabled SRAM Enabled
Soft Sequence Commands
NO. SYMBOLS Standard 34 1 tSS Soft Sequence Processing Time PARAMETER STK14 D88 MIN MAX 70 s o,p UNITS NOTES
Notes: o: This is the amount of time that it takes to take action on a soft sequence command. Vcc power must remain high to effectively register command. p: Commands like Store and Recall lock out I/O until operation is complete which further increases this time. See specific command.
34 tSS 34 tSS Soft Sequence Command
ADDRESS #1 ADDRESS #6
Soft Sequence Command ADDRESS
ADDRESS #1 ADDRESS #6
Vcc
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STK14D88
MODE SELECTION
E
H L L
W
X H L
G
X L X
A13-A0
X X X 0x0E38 0x31C7 0x03E0 0x3C1F 0x303F 0x03F8 0x0E38 0x31C7 0x03E0 0x3C1F 0x303F 0x07F0 0x0E38 0x31C7 0x03E0 0x3C1F 0x303F 0x0FC0 0x0E38 0x31C7 0x03E0 0x3C1F 0x303F 0x0C63
Mode
Not Selected Read SRAM Write SRAM Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM AutoStore Disable Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM AutoStore Enable Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile Store Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile Recall
I/O
Output High Z Output Data Input Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output Data Output High Z Output Data Output Data Output Data Output Data Output Data Output High Z
Power
Standby Active Active
Notes
L
H
L
Active
q,r,s
L
H
L
Active
q,r,s
Active ICC2
L
H
L
q,r,s
L
H
L
Active
q,r,s
Notes q: The six consecutive addresses must be in the order listed. W must be high during all six consecutive cycles to enable a nonvolatile cycle. r: While there are 15 addresses on the STK14D88, only the lower 14 are used to control software modes s: I/O state depends on the state of G. The I/O table shown assumes G low
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nvSRAM OPERATION
nvSRAM
The STK14D88 nvSRAM is made up of two functional components paired in the same physical cell. These are the SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates like a standard fast static RAM. Data in the SRAM can be transferred to the nonvolatile cell (the STORE operation), or from the nonvolatile cell to SRAM (the RECALL operation). This unique architecture allows all cells to be stored and recalled in parallel. During the STORE and RECALL operations SRAM READ and WRITE operations are inhibited. The STK14D88 supports unlimited read and writes like a typical SRAM. In addition, it provides unlimited RECALL operations from the nonvolatile cells and up to 200K STORE operations.
SRAM WRITE
A WRITE cycle is performed whenever E and W are low and HSB is high. The address inputs must be stable prior to entering the WRITE cycle and must remain stable until either E or W goes high at the end of the cycle. The data on the common I/O pins DQ0-7 will be written into memory if it is valid tDVWH before the end of a W controlled WRITE or tDVEH before the end of an E controlled WRITE. It is recommended that G be kept high during the entire WRITE cycle to avoid data bus contention on common I/O lines. If G is left low, internal circuitry will turn off the output buffers tWLQZ after W goes low.
AutoStore OPERATION
The STK14D88 stores data to nvSRAM using one of three storage operations. These three operations are Hardware Store (activated by HSB), Software Store (activated by an address sequence), and AutoStore (on power down). AutoStore operation is a unique feature of Simtek QuanumTrap technology is enabled by default on the STK14D88. During normal operation, the device will draw current from VCC to charge a capacitor connected to the VCAP pin. This stored charge will be used by the chip to perform a single STORE operation. If the voltage on the VCC pin drops below VSWITCH, the part will automatically disconnect the VCAP pin from VCC. A STORE operation will be initiated with power provided by the VCAP capacitor. Figure 3 shows the proper connection of the storage capacitor (VCAP) for automatic store operation. Refer to the DC CHARACTERISTICS table for the size of VCAP. The voltage on the VCAP pin is driven to 5V by a charge pump internal to the chip. A pull up should be placed on W to hold it inactive during power up. To reduce unneeded nonvolatile stores, AutoStore and Hardware Store operations will be ignored unless at least one WRITE operation has taken place since the most recent STORE or RECALL cycle. Software initiated STORE cycles are performed regardless of whether a WRITE operation
SRAM READ
The STK14D88 performs a READ cycle whenever E and G are low while W and HSB are high. The address specified on pins A0-16 determine which of the 32,768 data bytes will be accessed. When the READ is initiated by an address transition, the outputs will be valid after a delay of tAVQV (READ cycle #1). If the READ is initiated by E and G, the outputs will be valid at tELQV or at tGLQV, whichever is later (READ cycle #2). The data outputs will repeatedly respond to address changes within the tAVQV access time without the need for transitions on any control input pins, and will remain valid until another address change or until E or G is brought high, or W and HSB is brought low.
VCC
10k Ohm
VCAP
VCC
VCAP
W
Figure 3: AutoStore Mode
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has taken place. The HSB signal can be monitored by the system to detect an AutoStore cycle is in progress. To initiate the software STORE cycle, the following READ sequence must be performed:
1 Read A ddress 0x0E38 V alid REA D 2 Read A ddress 0x31C7 V alid REA D 3 Read A ddress 0x03E0 V alid REA D 4 Read A ddress 0x3C1F V alid REA D 5 Read A ddress 0x303F V alid REA D 6 Read A ddress 0x0FC0 Initiate STORE Cycle
HARDWARE STORE (HSB) OPERATION
The STK14D88 provides the HSB pin for controlling and acknowledging the STORE operations. The HSB pin can be used to request a hardware STORE cycle. When the HSB pin is driven low, the STK14D88 will conditionally initiate a STORE operation after tDELAY. An actual STORE cycle will only begin if a WRITE to the SRAM took place since the last STORE or RECALL cycle. The HSB pin also acts as an open drain driver that is internally driven low to indicate a busy condition while the STORE (initiated by any means) is in progress. This pin should be externally pulled up if it is used to drive other inputs. SRAM READ and WRITE operations that are in progress when HSB is driven low by any means are given time to complete before the STORE operation is initiated. After HSB goes low, the STK14D88 will continue SRAM operations for tDELAY. During tDELAY, multiple SRAM READ operations may take place. If a WRITE is in progress when HSB is pulled low, it will be allowed a time, tDELAY, to complete. However, any SRAM WRITE cycles requested after HSB goes low will be inhibited until HSB returns high. If HSB is not used, it should be left unconnected.
Once the sixth address in the sequence has been entered, the STORE cycle will commence and the chip will be disabled. It is important that READ cycles and not WRITE cycles be used in the sequence. After the tSTORE cycle time has been fulfilled, the SRAM will again be activated for READ and WRITE operation.
SOFTWARE RECALL
Data can be transferred from the nonvolatile memory to the SRAM by a software address sequence. A software RECALL cycle is initiated with a sequence of READ operations in a manner similar to the software STORE initiation. To initiate the RECALL cycle, the following sequence of E controlled READ operations must be performed:
1 Read A ddress 0x0E38 V alid REA D 2 Read A ddress 0x31C7 V alid REA D 3 Read A ddress 0x03E0 V alid REA D 4 Read A ddress 0x3C1F V alid REA D 5 Read A ddress 0x303F V alid REA D 6 Read A ddress 0x0C63 Initiate RECA LL Cycle
HARDWARE RECALL (POWER-UP)
During power up or after any low-power condition (VCCSOFTWARE STORE
Data can be transferred from the SRAM to the nonvolatile memory by a software address sequence. The STK14D88 software STORE cycle is initiated by executing sequential E controlled READ cycles from six specific address locations in exact order. During the STORE cycle, previous data is erased and then the new data is programmed into the nonvolatile elements. Once a STORE cycle is initiated, further memory inputs and outputs are disabled until the cycle is completed.
Internally, RECALL is a two-step procedure. First, the SRAM data is cleared, and second, the nonvolatile information is transferred into the SRAM cells. After the tRECALL cycle time, the SRAM will once again be ready for READ or WRITE operations. The RECALL operation in no way alters the data in the nonvolatile storage elements.
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DATA PROTECTION
The STK14D88 protects data from corruption during low-voltage conditions by inhibiting all externally initiated STORE and WRITE operations. The lowvolage condition is detected when VCCNOISE CONSIDERATIONS
The STK14D88 is a high-speed memory and so must have a high-frequency bypass capacitor of approximately 0.1 F connected between VCC and VSS, using leads and traces that are a short as possible. As with all high-speed CMOS ICs, careful routing of power, ground, and signals will reduce circuit noise.
PREVENTING AUTOSTORE
The AutoStore function can be disabled by initiating an AutoStore Disable sequence. A sequence of READ operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore Disable sequence, the following sequence of E controlled or G controlled READ operations must be performed:
1 Read A ddress 0x0E38 V alid REA D 2 Read A ddress 0x31C7 V alid REA D 3 Read A ddress 0x03E0 V alid REA D 4 Read A ddress 0x3C1F V alid REA D 5 Read A ddress 0x303F V alid REA D 6 Read A ddress 0x03F8 A utoStore Disable
LOW AVERAGE ACTIVE POWER
CMOS technology provides the STK14D88 with the benefit of power supply current that scales with cycle time. Less current will be drawn as the memory cycle time becomes longer than 50 ns. Figure 4 shows the relationship between ICC and READ/ WRITE cycle time. Worst-case current consumption is shown for commercial temperature range, VCC=3.6V, and chip enable at maximum frequency. Only standby current is drawn when the chip is disabled. The overall average current drawn by the STK14D88 depends on the following items:
1 2 3 4 5 6 The duty cycle of chip enable The overall cycle rate for operations The ratio of READs to WRITEs The operating temperature The VCC Level I/O Loading
The AutoStore can be re-enabled by initiating an AutoStore Enable sequence. A sequence of READ operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore Enable sequence, the following sequence of E controlled or G controlled READ operations must be performed:
1 Read A ddress 0x0E38 V alid REA D 2 Read A ddress 0x31C7 V alid REA D 3 Read A ddress 0x03E0 V alid REA D 4 Read A ddress 0x3C1F V alid REA D 5 Read A ddress 0x303F V alid REA D 6 Read A ddress 0x07F0 A utoStore Enable
Average Active Current (mA)
50 40 30 20 10 0 50 100 150 200 300 Cycle Time (ns)
Writes
Reads
If the AutoStore function is disabled or re-enabled, a manual STORE operation (Hardware or Software) needs to be issued to save the AutoStore state through subsequent power down cycles. The part comes from the factory with AutoStore enabled.
Figure 4 - Current vs. Cycle Time
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ORDERING INFORMATION STK14D88-R F 45 I TR
Temperature Range Blank= Tube TR= Tape & Reel Temperature Range Blank=Commercial (0 to +70 C) I= Industrial (-45 to +85 C) Access Time 25=25 ns 35=35 ns 45=45 ns Lead Finish F=100% Sn (Matte Tin) RoHS Compliant Package N=Plastic 32-pin 300 mil SOIC (50 mil pitch) R=Plastic 48-pin 300 mil SSOP(25 mil pitch)
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Ordering Codes
Part Number STK14D88-NF25 STK14D88-NF35 STK14D88-NF45 STK14D88-NF25TR STK14D88-NF35TR STK14D88-NF45TR STK14D88-RF25 STK14D88-RF35 STK14D88-RF45 STK14D88-RF25TR STK14D88-RF35TR STK14D88-RF45TR STK14D88-NF25I STK14D88-NF35I STK14D88-NF45I STK14D88-NF25ITR STK14D88-NF35ITR STK14D88-NF45ITR STK14D88-RF25I STK14D88-RF35I STK14D88-RF45I STK14D88-RF25ITR STK14D88-RF35ITR STK14D88-RF45ITR Description 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SOP32-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 3V 32Kx 8 AutoStore nvSRAM SSOP48-300 Temperature Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Industrial Industrial Industrial Industrial Industrial Industrial Industrial Industrial Industrial Industrial Industrial Industrial
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PACKAGE DRAWINGS
32 Pin 300 mil SOIC
0.292 7.42 0.300 7.60
(
)
0.405 10.29 0.419 10.64
(
)
Pin 1 Index
0.810 20.57 0.822 20.88
(
)
.050 (1.27) BSC
0.026 0.66 0.032 0.81
(
)
0.090 2.29 0.100 2.54
()
0.086 0.090 2.18 ( 2.29)
0.12 0.22 0.004 0.10 0.010 0.25
0.014 0.36 0.020 0.51
()
()
DIM = INCHES DIM = mm MIN MAX MIN ( MAX )
0.006 0.013
0.15 ( 0.32 ) 0.021 0.041
0 8 0.53 ( 1.04 )
o o
Document Control #ML0033 Rev 1.7 February 2007
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STK14D88
48 Pin 300 mil SSOP
TOP VIEW
N
0.620 15.75 0.630 16.00
(
) BOTTOM VIEW
0.400 0.410
( 10.16 ) 10.41
0.292 0.299 7.42 ( 7.59 ) 0.292 0.299 7.42 ( 7.59 )
.045 .055
(11.43) 13.97
Pin 1 indicator .045 DIA. (11.43)
1 2 3
.020 (5.1)
.035 .045
8.89 (11.43)
SIDE VIEW
0.025 (0.635) 0.008 0.0135
( 0.203) 0.343
0.095 0.110
END VIEW
0.010 0.016
( 0.25 ) 0.41
45
( 2.41) 2.79
SEATING PLANE
0.088 0.092
( 2.24 ) 2.34
SEE DETAIL A
0.620 15.75 0.630 16.00
(
)
0.008 0.016
( 0.20) 0.41
DIM = INCHES
MIN MAX
0.010 (0.25)
END VIEW
PARTING LINE
GAUGE PLANE SEATING PLANE
DIM = mm
(
MIN MAX
)
DETAIL A
0.024 0.040
( 0.61 ) 1.02
Document Control #ML0033 Rev 1.7 February 2007
17
STK14D88
Document Revision History
Rev 1.0 1.1 1.3 Date December 2004 February 2005 August 2005 Change Initial Revision Fixed Number of pins typographical error, "R" package on Order Information Page, Corrected to 48 pins from incorrect value of 40
Parameter Old Value ICC3 Max Com. 5 mA ICC3 Max Ind. 5 mA ISB Max Com. 2 mA ISB Max Ind. 2 mA
1.4 December 2005
Parameter tRECALL tSS NVC Old Value 60 us Undefined 1 Million 100 Years at Unspecified Temperature
New Value 10 mA 10 mA 3 mA 3 mA
Notes
New Value 50 us 70 us 500K 20 Years @ Max Temperature
Notes Typographical Error In Datasheet New Nonvolatile Store Cycle Spec New Data Retention Specification
DATAR
1.5 1.6
February 2006 March 2006
Added back a missing Mode table. Removed "Leaded" Lead Finish package offering
Document Control #ML0033 Rev 1.7 February 2007
18
STK14D88
1.7 February 2007 Added tape and reel ordering option Added product order code listing Added package drawings Reformatted entire document Deleted G-Controlled Soft Sequence
Parameter NVC DATA R VSW ITCH Min. IOUT (HSB) tELAX, tGLAX tEHAX, tGHAX tDELAY Max. tHLBL tSS Old Value 500K 20 Years @ 85 C 2.55 V Notes New Nonvolatile 200K Store Cycle Spec 20 Years @ New Data Retention 55 C Spec No Min. Spec -10 uA 20 ns 1 ns 70 us 300ns 70 uS Min. 70 uS Max. Not Specified Before Removed New Spec New Spec Spec Not Required Typo New Value
SIMTEK STK14D88 Datasheet, February 2007 Copyright 2007, Simtek Corporation. All rights reserved. This datasheet may only be printed for the expressed use of Simtek Customers. No part of the datasheet may be reproduced in any other form or means without the express written permission from Simtek Corporation. The information contained in this publication is believed to be accurate, but changes may be made without notice. Simtek does not assume responsibility for, or grant or imply any warranty, including MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE regarding this information, the product or its use. Nothing herein constitutes a license, grant or transfer of any rights to any Simtek patent, copyright, trademark, or other proprietary right.
Document Control #ML0033 Rev 1.7 February 2007
19

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