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VVZB 135
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System
10 + 11 13 16 15 14 19 + 20
VRRM = 1600 V IdAVM = 135 A
12
NTC
VRRM
V 1600
Type
6+7 4+5 2+3
1
VVZB 135-16 NO1
17 8+9 18 21+22
Symbol VRRM IdAVM IFSM I2t Ptot (di/dt)cr
Rectifier Bridge
Conditions TC = 85C; sinusoidal 120 TVJ = 45C; t = 10 ms; VR = 0 V TVJ = 150C; t = 10 ms; VR = 0 V TVJ = 45C; t = 10 ms; VR = 0 V TVJ = 150C; t = 10 ms; VR = 0 V TC = 25C per diode TVJ = TVJM; repetitive; IT = 150 A f = 50 Hz; tP = 200 s VD = 2/3 VDRM; IG = 0.45 A; non repetitive; IT = Id(AV)/3 diG/dt = 0.45 A/s TVJ = TVJM; VDR = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) TVJ = TVJM; tP = 30 s IT = Id(AV)/3; tP = 300 s
Maximum Ratings
1600
Features * Soldering connections for PCB mounting * Convenient package outline * Thermistor * Isolation voltage 2500 V~
135 700 610 2450 1860 190 100
V A A A A A W A/s
Applications * Drive Inverters with brake system
Advantages 500 1000 10 5 0.5 A/s V/s W W W V V A A A W V A A A A W * 2 functions in one package * Easy to mount with two screws * Suitable for wave soldering * High temperature and power cycling capability
(dv/dt)cr PGM PGAVM VCES VGE
IGBT
TVJ = 25C to 150C Continuous TC = 25C; DC TC = 80C; DC tp = Pulse width limited by TVJM TC = 25C
Fast Recovery Diode
1200 20 95 67 100 380 1200 27 38 tbd 200 130
IC25 IC80 ICM Ptot VRRM IFAV IFRMS IFRM IFSM Ptot
TC = 80C; rectangular d = 0.5 TC = 80C; rectangular d = 0.5 TC = 80C; tP = 10 s; f = 5 kHz TVJ = 45C; t = 10 ms TC = 25C
Data according to IEC 60747
428
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
1-5
VVZB 135
Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.1 mA 20 mA 1.43 0.85 7.1 1.5 1.6 78 200 0.2 5 450 100 2 150 V V m V V mA mA V mA mA mA s s
IR, ID VF, VT VT0 rT VGT IGT
Rectifier Bridge
Rectifier Diodes
VR = VRRM; VR = VRRM; IF = 80 A;
TVJ = 25C TVJ = 150C TVJ = 25C
for power-loss calculations only TVJ = 150C VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ TVJ TVJ TVJ = 25C = -40C = 25C = -40C
VGD IGD IL IH tgd tq
VD = 2/3 VDRM VD = 2/3 VDRM
VD = 6 V; tG = 10 s; diG/dt = 0.45 A/s; IG = 0.45 A TVJ = TVJM; VD = 6 V; RGK = VD = 1/2 VDRM; diG/dt = 0.45 A/s; IG = 0.45 A TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 s; dv/dt = 15 V/s; IT = 20 A; -di/dt = 10 A/s per diode 0.2 VGS = 0 V; IC = 0.1 mA IC = 8 mA VCE = 1200 V; TVJ = 25C VCE = 0,8*VCES; TVJ = 125C VGE = 15 V; IC = 100 A VGE = 15 V; VCE = 900 V; TVJ = 125C VGE = 15 V; VCE = 1200 V; TVJ = 125C; clamped inductive load; L = 100 H; RG = 22 VCE = 25 V; f = 1 MHz, VGE = 0 V VCE = 720 V; IC = 50 A VGE = 15 V; RG = 22 Inductive load; L = 100 H; TVJ = 125C 3.8 150 680 6 5 0.1 1200 4.5
RthJC RthCH VBR(CES) VGE(th) ICES VCEsat tSC (SCSOA)
IGBT
0.65 K/W K/W 6.45 0.1 0.5 3.5 10 100 V V mA mA V s A
RBSOA
Cies td(on) td(off) Eon Eoff RthJC RthCH
nF ns ns mJ mJ 0.33 K/W K/W
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
2-5
428
VVZB 135
Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.25 mA 1 mA 2.76 1.3 16 5.5 40 0.25
NTC
10 V VG
1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
IR VF VT0 rT IRM trr RthJC RthCH R25 B25/50 Symbol TVJ TVJM Tstg
Module Fast Recovery Diode
VR = VRRM; TVJ = 25C VR = 1200 V; TVJ = 125C IF = 30 A; TVJ = 25C
V V m A ns
3
For power-loss calculations only TVJ = 150C IF = 50 A; -diF/dt = 100 A/s; VR = 100 V IF = 1 A; -diF/dt = 200 A/s; VR = 30 V
1
1
2 5 4
6
11
0.9 K/W K/W k K
0.1 1
IGD, TVJ = 125C
4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
R(T) = R25 * e B25/100
(
1 T
1 298K
)
4.75
5.0 5.25 3375
10
100
1000 IG
mA
Fig. 1 Gate trigger characteristics Conditions Maximum Ratings -40...+150 150 -40...+125 50/60 Hz; t = 1 min IISOL 1 mA; t = 1 s Mounting torque Creep distance on surface Strike distance in air Maximum allowable acceleration typ. 2500 3000 2.25...2.75 20...25 12.7 9.6 50 180 C C C V~ V~ Nm lb.in. mm mm m/s2 g
1 10 1000 TVJ = 25C s tgd 100 typ. Limit
VISOL Md dS dA a Weight
10
Dimensions in mm (1 mm = 0.0394")
100
IG
mA 1000
Fig. 2 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
3-5
428
VVZB 135
150 A 125 IT 100 ITSM 400 TVJ =45C TVJ = 45C 75 300 1000 TVJ =150C 600 A 500 50 Hz 80 % VRRM 10000 It As
2 2
VR = 0 V
50
TVJ =125C
200 TVJ =150C
25 TVJ = 25C 0 0.0 0.5 1.0 1.5 VT V 2.0
100
0 0.001
100 0.01 t 0.1 s 1 1 t ms 10
Fig. 3 Forward current versus voltage drop per leg
250 W 0.5 200 Ptot
Fig. 4 Surge overload current
150 0.2 A 120 ITAVM
Fig. 5 It versus time
(per thyristor/diode)
RthKA K/W =
150 1 100
90
1.5 2
60
50
3 5
30
0 0 30 60 90 IRMS 120 A 0 25 50 75 100 TA 125 150
0 0 25 50 75 100 125 150 TC
Fig. 6 Power dissipation versus direct output current and ambient temperature
0.7 K/W 0.6 0.5 ZthJC 0.4 0.3
Fig. 7 Maximum forward current at case temperature
Constants for ZthJC calculation:
0.2 0.1 0.0 0.001
VVZB 135
Rthi / (K/W) 0.03 0.083 0.361 0.176
ti / (s) 0.0005 0.008 0.094 0.45
0.01
0.1
1 t
s
10
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
IXYS reserves the right to change limits, test conditions and dimensions.
428
(c) 2004 IXYS All rights reserved
4-5
VVZB 135
150
A 90 A
TVJ = 25C TVJ = 125C
120
IC
IF 60
TVJ = 125C
90 60
30
30
VGE = 15V
TVJ = 25C
0 0.0
0
0.5
1.0
1.5
2.0
2.5
VCE
3.0
3.5 V 4.0
0.0
0.5
1.0
1.5
2.0
VF
2.5
3.0 V 3.5
Fig. 9 Typ. output characteristics
Fig. 10 Typ. forward characteristics of free wheeling diode
900 ns
9
mJ Eoff
10
mJ t Eoff
td(off)
1000 ns 800 t 600
8 6
6
VCE = 720 V VGE = 15 V
td(off)
600
4
300
Eoff
3
Eoff
RG = 22 TVJ = 125C
2
tf 0
VCE = 720 V VGE = 15 V IC = 50 A TVJ = 125C
400 200 tf 0 50 60 RG
0 0 20 40 60 80
IC
0
0 10 20 30 40
100 A 120
Fig. 11 Typ. turn off energy and switching times versus collector current
1
diode
Fig. 12 Typ. turn off energy and switching times versus gate resistor
K/W 0.1 ZthJC 0.01
IGBT
10000 R 1000
0.001
single pulse
0.0001 0.00001 0.0001 0.001
100 0.01 0.1 t 1 s 10 0 25 50 75 100 T
VVZB 135
125 C 150
Fig. 13 Typ. transient thermal impedance
Fig. 14 Typ. thermistor resistance versus temperature
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
5-5
428

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Price & Availability of VVZB135

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16IOXT 03AH3496	Littelfuse Inc	Bipolar Module-Thyristor/Diode E2-Pack/ Box \|Littelfuse VVZB135-16IOXT	100: USD73.86 50: USD78.37 25: USD80.06 10: USD86.26 5: USD93.03	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16NO1 VVZB135-16NO1-ND	IXYS Corporation	RECT BRIDGE 3PH 135A 1600V E2		0
VVZB135-16IOXT VVZB135-16IOXT-ND	IXYS Corporation	DIODE BRIDGE 1600V 150A	102: USD72.88343 12: USD80.57 6: USD88.25667	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16IOXT 747-VVZB135-16IOXT	IXYS Corporation	Bridge Rectifiers Three Phase Rectifier Bridge	1: USD88.25 12: USD83.69 30: USD81.42	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16IOXT VVZB135-16IOXT	IXYS Corporation	Bridge Rectifiers Three Phase Rectifier Bridge	6: USD87.37 12: USD80.78 30: USD79.2 102: USD72.88	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16IOXT VVZB135-16IOXT	IXYS Corporation	Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV	6: USD100.05 3: USD113.22 1: USD126.29	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16IOXT	Littelfuse Inc	DIODE BRIDGE 1600V 150A	6: USD136.5988 1: USD143.42874	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VVZB135-16IOXT	IXYS Corporation			6

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