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WTD9973 Surface Mount N-Channel Enhancement Mode POWER MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <80m@V GS =10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package Features: SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25C) , (VGS@10V, TC=100C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RJC RJA TJ,Tstg Value 60 20 14 9 40 27 4.5 110 -55~+150 Unit V A Total Power Dissipation(TC=25C) Maximum Thermal Resistace Junction-case Maximum Thermal Resistace Junction-ambient Operating Junction and Storage Temperature Range W C/W C/W C Device Marking WTD9973=9973 http:www.weitron.com.tw WEITRON 1/6 02-Aug-05 WTD9973 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250A Gate-Source Threshold Voltage VDS=VGS,ID=250A Gate-Source Leakage current VGS=20V Drain-SourceLeakage Current(Tj=25C) VDS=60V,VGS=0 Drain-SourceLeakage Current(Tj=150C) VDS=48V,VGS=0 Drain-SourceOn-Resistance VGS=10V,I D=9A VGS=4.5V,I D=6A Forward Transconductance VDS=10V,I D=9A BVDSS VGS(Th) IGSS 60 1.0 IDSS 25 V 3.0 100 1 A nA RDS(on) gfs - 8.6 80 100 - m S Dynamic Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss Coss Crss 720 77 45 1150 pF http:www.weitron.com.tw WEITRON 2/6 02-Aug-05 WTD9973 Switching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Turn-off Delay Time VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Fall Time VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Total Gate Charge2 VDS=48V,VGS=4.5V,I D=9A Gate-Source Charge VDS=48V,VGS=4.5V,I D=9A Gate-Source Change VDS=48V,VGS=4.5V,I D=9A td(on) tr td(off) tf Qg Qgs Qgd 7 15 16 3 8 3 4 ns 13 nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=14A Reverse Recovery Time VGS=0V,IS=9A,dl/dt=100A/s Reverse Recovery Charge VGS=0V,IS=9A,dl/dt=100A/s Note: 1. Pulse width limited by safe operating area. 2. Pulse width 300s, duty cycle 2%. VSD T rr Q rr - 28 27 1.2 - V ns nC http:www.weitron.com.tw WEITRON 3/6 02-Aug-05 WTD9973 45 32 I D ,DRAIN CURRENT (A) 40 35 30 25 20 15 10 5 0 0 ID ,Drain Current (A) TC =25C 10V 7.0V 5.0V 4.5V 28 24 20 16 12 8 4 0 0 TC =150C 10V 7.0V 5.0V 4.5V VG= 3.0V VG= 3.0V 1 2 3 4 5 6 1 FIG.1 Typical Output Characteristics 90 2.5 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 2 3 4 5 6 7 85 I D = 9A TC = 25C Normalized RDs(on) 2.0 I D = 9A VG = 10V RDs(on) (m) 80 1.5 75 1.0 70 0.5 65 3 Fig.3 On-Resistance v.s. Gate Voltage 14 12 10 8 6 4 2 0 0.5 2.5 VGS ,Gate-to-source Voltage(V) 5 7 9 11 0.0 -50 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) 2.0 Tj = 25C VGS(th)(V) 1.4 Tj = 150C 1.5 IS(A) 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -50 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) Tj ,Junction Temperature(C) 0 50 100 150 Fig.6 Gate Threshold Voltage v.s. Junction Temperature WEITRON http://www.weitron.com.tw 4/6 02-Aug-05 WTD9973 12 10000 f = 1.0MHz VGS , Gate to Source Voltage(V) 10 I D = 9A VDS = 48V VDS = 38V VDS = 30V C(pF) 1000 Ciss 8 6 4 2 100 Coss Crss 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response(R jc ) Duty factor = 0.5 10 1ms 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse I D(A) 10ms 100ms 1s DC TC = 25C Single Pulse 0.1 0.1 1 10 100 1000 PDM t T 1 Duty factor = t / T Peak Tj=PDM x R jc + Tc t, Pulse Width(s) 0.001 0.01 0.1 1 VDS , Drain-to-Source Voltage(V) 0.01 0.00001 0.0001 Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG 4.5V QGS 10% VGS t d(on) t r t d(off) t f QGD Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 02-Aug-05 WTD9973 D-PAK / (TO-252) Outline Dimension Unit:mm E A 4 D-PAK G H J 1 2 3 B M D C L K Dim A B C D E G H J K L M Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 Max WEITRON http://www.weitron.com.tw 6/6 02-Aug-05 |
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