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NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.075 (max) NUltra High-Speed Switching NSOP-8 Package N2 FET Devices Built-in GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP134A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.075 ( Vgs = -4.5V ) : Rds (on) = 0.115 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP-8 PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain 11 Ta=25 OC UNITS V V A A A W O PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS - 20 +1 2 - 4.5 - 18 - 4.5 2 150 - 55 ~ 150 C C O ( note ) : When implemented on a glass epoxy PCB 783 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20V , Vgs = 0V Vgs = 12V , Vds = 0V Id = -1mA , Vds = - 10V Id = - 2.5A , Vgs = - 4.5V Id = - 2.5A , Vgs = - 2.5V Id = - 2.5A , Vds = - 10V If = - 4.5A , Vgs = 0V - 0.5 0.062 0.095 7.5 - 0.85 - 1.1 MIN TYP MAX - 10 1 Ta=25 C UNITS O A A V S V - 1.2 0.075 0.115 Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = - 10V , Vgs = 0V f = 1 MHz MIN TYP 770 440 190 MAX Ta=25 C UNITS O pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 2.5A Vdd = - 10V CONDITIONS MIN TYP 15 20 55 30 MAX Ta=25 C UNITS O ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS O C/W 784 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 11 785 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 786 |
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