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SRFET
AO4944 Dual N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low and high side switch in SMPS and general purpose applications. Standard product AO4944 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V (V GS = 10V) ID = 8.6A RDS(ON) < 16m (VGS = 10V) RDS(ON) < 20m (VGS = 4.5V)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.3mH TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead
B B
Maximum 30 12 8.6 6.9 40 16 38 2 1.3 -55 to 150
Units V V A A mJ W C
TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4944
Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=8.6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C 1.5 40 13 20 16 64 0.4 0.6 4.5 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 224 92 1.6 24 VGS=10V, VDS=15V, ID=8.6A 12.0 3.9 4.2 5.5 VGS=10V, VDS=15V, RL=1.7, RGEN=3 IF=8.6A, dI/dt=300A/s 4.7 24.0 4.0 10 6.8 12 3.0 31 nC nC nC ns ns ns ns ns nC 1885 16 25 20 1.8 Min 30 0.01 5 0.1 10 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8.6A, dI/dt=300A/s
A:The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2OZ. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D: The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F: The current rating is based on the t<=10s junction to ambient thermal resistance rating. Rev0:December 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4944
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 60 ID(A) 15 10 20 0 0 1 2 3 4 5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7A ID=8.6A VGS=10V VGS=3V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 40 3.5V 10V 4.5V ID (A) 6V 4V 30 25 20 VDS=5V
25C
DYNAMIC
20
17 RDS(ON) (m)
14
11
VGS=10V
8
45 40 35 RDS(ON) (m) IS (A) 30 25 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=8.6A
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4944
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 2500 2000 Capacitance (pF) 1500 1000 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss
VDS=15V ID=8.6A
Ciss
DYNAMIC PARAMETERS
1000.0 100.0 ID (Amps) Power (W) 10.0 1.0 0.1 0.0 0.01 T J(Max)=150C T C=25C DC RDS(ON) limited 10s 100s 1m 10ms 0.1s 1s 10s 10 100
50 40 30 20 10 0 0.0001 T J(Max)=150C T C=25C
0.1
1 VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.001
0.1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=62.5C/W 0.01 0.1 1 PD T on T 100 1000
0.01 Single Pulse 0.001 0.00001 0.0001 0.001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4944
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1.0E-02 VDS=24V VSD(V) IR (A) 1.0E-03 VDS=12V 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode PARAMETERS Reverse Leakage Current vs. Junction Temperature 12 di/dt=800A/us 125C 10 8 Irm (A) 25C Qrr Irm 125C 25C trr (ns) 6 4 2 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 20 Qrr (nC) 15 10 5 0 0 Qrr Irm 200 400 600 800 125C Is=20A 25C 125C 10 8 6 4 2 0 1000 15 12 9 6 3 0 0 200 400 600 800 trr 25C 125C 125C 25C Irm (A) trr (ns) 1.5 1 0.5 0 1000 S Is=20A 2 12 10 8 trr 6 4 2 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 2.5 S 25C 0 0 25C di/dt=800A/us 125C 0 50 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 2.5 2 1.5 1 0.5 10A 5A 20A
IS=1A
DYNAMIC
30 25 20 Qrr (nC) 15 10 5
125C
25C
S
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S

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