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| SCA-005OP Silicon PIN Photodiode with Op Amp D a ta S h e e t Description The SCA-005OP is a high sensitive silicon PIN photodiode for use in low light applications across the spectral range of 320nm to 1100 nm. This N-type photodiode offers high speed, low capacitance, and high breakdown voltage characteristics. The standard version of model SCA-005OP is housed in a hermetically sealed electrically isolated 8 pin TO-39 metal case. It is also available in custom packages and in chip form for hybrid circuit boards. This device is capable of meeting MIL-PRF-19500 requirements for environmental integrity and reliability. Applications * * * * * Medical Analytical Instruments Optical Power Meters Densitometers Optical Smoke Detection Optical Spectroscopy Features * Photoconductive or Photovoltaic Regime * Wide Bandwidth * Available in Chip Form * Spectral Response from 320 to 1100nm Benefits * * * * Low Noise Compact Packaging High Sensitivity Gain Control Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Package Outline 0.5 min (12.7) O 0.18 (0.46) 0.255 (6.48) O 0.100 Window O 0.250 (6.35) W O 0.250 (6.35) O 0.328 (8.33) O 0.301 (7.64) O 0.360 (9.14) 0.080 (2.03) Top View Copyright(c) 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 4 www.SEMICOA.com SCA-005OP Silicon PIN Photodiode with Op Amp D a ta S h e e t DEVICE CHARACTERISTICS characteristics specified at TA = 25C Mechanical Characteristics Active Diameter d Active Area A 0.10 5.1 Inches mm2 Optical Characteristics Spectral Response Peak Sensitive Wavelength p 320 to 1100 950 nm nm Electrical Characteristics Parameter Dark Current Responsivity Risetime Capacitance Reverse Breakdown Voltage Forward Voltage Shunt Resistance Series Resistance Noise Equivalent Power Symbol ID R tr Cj VBR VF Rsh RS NEP Test Conditions VR = 1 mV VR = 25 V = 900 nm = 830 nm = 632 nm VR = 25 V, RL = 50 VR = 25 V, f = 1 MHz IR = 10 A IF = 1 mA VR = 1 mV IF = 10 mA Min Typ 0.002 0.5 0.62 0.57 0.35 10 10 100 0.5 200 7.0 2x10-14 Max 2.0 50 Units nA A/W 20 15 1.0 15.0 ns pF V V M W/Hz 0.5 0.45 0.25 50 10 Amplifier Specifications Parameter Supply Voltage Input Offset Voltage Supply Current Input Offset Drift (unnulled) Input Bias Current Slew Rate Gain Bandwidth Product Input Noise Voltage Symbol VSU VOS ISU TCVOS IP SR GBP eN 5 3 Min 5 Typ 15 0.5 2.8 4 15 9 5.4 20 Max 18 3 5 15 Units V mV mA V/OC pA V/s MHz nV/Hz Copyright(c) 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 4 www.SEMICOA.com SCA-005OP Silicon PIN Photodiode with Op Amp D a ta S h e e t all curves at TA = 25C unless otherwise specified CHARACTERISTIC CURVES R - Normalized Responsivity (%) 100 120 C j - Capacitance (pF) 100 80 60 40 20 0 600 800 - Wavelength (nm) 1000 80 60 40 20 0 400 0 10 20 30 40 VR - Re ve rse Voltage (Volts) 50 Figure 1 Responsivity vs Wavelength 1000 1 000 Figure 2 Capacitance vs Reverse Voltage T = 85 C 1 00 1 0 1 0.1 0.01 0.001 ID - Reverse Dark Current (nA) 100 10 1 0.1 0.01 0.001 ID - Reverse Dark Current (nA) T = 50 C T = 50 C T = 25 C T = 25 C 20 30 40 50 60 O 70 80 90 0.00001 0.001 0.1 10 1000 T - Temperature ( C) VR - Re ve rse Voltage (Volts) Figure 3 Reverse Current vs Temperature 100 Figure 4 Reverse Current vs Reverse Voltage 1.E-12 NEP - Noise Equivalent Power T = 85 C T = 50 C IL - Output Light Current (A) 10 1 0.1 0.01 0.001 0.0001 0.00001 (W/Hz ) 1/2 1.E-13 T = 25 C 1E-06 1E-05 1E-04 0.001 0.01 0.1 2 1 10 1.E-14 0.0001 0.001 0.01 0.1 1 10 100 Ee - Radiation Flux (mW/cm ) VR - Reverse Voltage (Volts) Figure 5 Light Current vs Irradiance @ = 950 nm Figure 6 Noise Equivalent Power vs Reverse Voltage Specifications are subject to change without notice. Please consult the website or factory for current information. Copyright(c) 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 4 www.SEMICOA.com SCA-005OP Silicon PIN Photodiode with Op Amp D a ta S h e e t Package Specifications 1. Offset Null 4x 90 5 4 45.0 2. Inverting Input 3. Non Inverting Input 4. -VCC 5. Offset Null 6. Output O 0.229 (5.82) 6 3 7 45 Hole Size: 0.025 (0.64) Annular Ring: 0.015 (0.38) 2 8 1 FOV O 0.229 (5.82) 45 7. +VCC 8. Detector/Case Bottom View Device Schematic +Vcc 0.1F Typ C1 R1 100k 2 7 1 5 + OpAmp 6 V OUT 8 3 4 0.1F Typ -Vcc Note: The shaded area contains the contents of the SCA-005OP. The exterior components show a typical configuration. Copyright(c) 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 4 of 4 www.SEMICOA.com |
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