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| SKiiP 16GH066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Values Units Diode - Inverter MiniSKiiP(R)1 H-bridge inverter SKiiP 16GH066V1 Characteristics Symbol Conditions IGBT - Inverter min. typ. max. Units Preliminary Data Features Remarks Diode - Inverter Temperature Sensor Mechanical Data GH 1 01-06-2005 SEN (c) by SEMIKRON SKiiP 16GH066V1 Fig. 1 Typ. output characteristic Fig. 2 Typ. rated current vs. temperature Fig. 3 Typ. transfer characteristic Fig. 4 Reverse bias safe operating area Fig. 5 Typ. turn-on /-off energy = f (IC) Fig. 6 Typ. turn-on /-off energy = f (RG) 2 01-06-2005 SEN (c) by SEMIKRON SKiiP 16GH066V1 Fig. 7 Typ. Gate charge characteristic Fig. 8 Typ. thermal impedance Fig. 9 Typ. freewheeling diode forward characteristic 3 01-06-2005 SEN (c) by SEMIKRON SKiiP 16GH066V1 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 01-06-2005 SEN (c) by SEMIKRON |
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