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| HWF1686NC L-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features Output Power: P1dB=30dBm(typ.) High Gain: GL=15dB(typ.) High Efficiency: PAE =45%(typ.) High Linearity: IP3=45dBm(typ.) Class A or Class AB Operation Outline Dimensions 650 Description Designed for various RF and Microwave applications, the HWF1686NC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length. Unit : m Thickness: 1005 All Bond Pads: 60 x 60 Absolute Maximum Ratings S o u rce VDS VGS ID IG TCH TSTG PT * Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 2mA 175C -65 to +175C 3.5W Bond Pads: 1 to 2: Gate 3 to 4: Drain 0 .0 0 .0 5 8 .5 3 4 4 .5 400 * mounted on an infinite heat sink Electrical Specifications (TA=25C) Symbol IDSS VP Parameters Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance Output Power @1dB Gain Linear Power Gain Power-added Efficiency (Pout = P1dB) Third-order Intercept Point * Conditions VDS=3V, VGS=0V VDS=3V, IDS=20mA VDS=3V, IDS=200mA Channel to Case VDS=10V IDS=0.5IDSS f=2.4GHz gm Rth P1dB GL PAE IP3 *: Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3 Bonding Manner Gate, drain, pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. S o u rce 435 1 3 215 2 4 Units mA V mS C/W dBm dB % dBm Min. 300 -3.5 29.0 14 42 Typ. 400 -2.0 200 32 30.0 15 45 45 Max. 600 -1.5 45 - HWF1686NC L-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Typical Performance (TA=25C) Output Power, Efficiency & Gain vs. Input Power VDS=10V, IDS=0.5IDSS f=2.4GHz 40 35 50 Pout (dBm) add 40 30 25 20 Gain (dB) 15 10 Gain 20 10 5 0 0 2 4 6 8 10 12 14 16 18 20 0 Pin (dBm) Power Derating Curve 4 Total Power Dissipation, PT (W) 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 200 Case Temperature, TC (C) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. add Pout 30 (%) HWF1686NC L-Band Power FET Non-Via Hole Chip Autumn 2002 V1 S-Parameters (Common Source, TA=25C, VDS=10V, IDS=0.5IDSS) Freq (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 S11 Mag. 0.941 0.955 0.945 0.939 0.913 0.920 0.905 0.900 0.888 0.877 0.866 0.862 0.849 0.845 0.834 0.830 0.824 0.820 0.816 0.815 0.808 0.807 0.805 0.802 0.801 0.798 0.791 0.794 0.806 0.821 0.836 0.848 0.859 S21 Ang. Mag. 7.298 7.083 6.908 6.721 6.531 6.341 6.141 5.965 5.761 5.583 5.400 5.244 5.070 4.908 4.748 4.594 4.446 4.310 4.181 4.062 3.932 3.829 3.723 3.626 3.530 3.436 2.695 2.190 1.822 1.544 1.319 1.138 0.989 S12 Ang. Mag. 0.014 0.016 0.018 0.020 0.022 0.024 0.026 0.027 0.029 0.030 0.031 0.032 0.033 0.034 0.035 0.036 0.037 0.037 0.038 0.039 0.039 0.040 0.040 0.041 0.041 0.041 0.048 0.056 0.066 0.078 0.090 0.103 0.116 S22 Ang. Mag. 0.416 0.404 0.396 0.389 0.387 0.376 0.370 0.361 0.358 0.355 0.352 0.352 0.350 0.346 0.348 0.343 0.340 0.337 0.333 0.331 0.326 0.323 0.319 0.319 0.319 0.320 0.321 0.346 0.385 0.433 0.489 0.540 0.585 Ang. -13.56 -14.52 -16.79 -18.49 -20.05 -22.07 -23.83 -25.76 -27.18 -29.51 -31.54 -33.25 -35.19 -36.50 -37.83 -39.01 -40.61 -41.73 -42.92 -44.47 -45.58 -47.57 -49.20 -51.10 -52.93 -55.13 -70.73 -87.83 -104.02 -117.44 -128.90 -138.51 -147.07 -35.52 -42.37 -48.22 -54.25 -60.70 -66.26 -71.82 -77.43 -82.61 -86.99 -91.52 -96.16 -100.26 -104.19 -107.89 -111.59 -115.06 -118.38 -121.59 -124.82 -127.70 -130.55 -133.31 -135.83 -138.38 -141.06 -161.20 -176.63 170.78 160.59 151.44 143.35 135.83 155.47 150.83 146.30 142.13 138.16 134.51 130.91 127.35 124.14 121.03 117.94 115.05 112.09 109.37 106.76 104.16 101.56 99.28 96.97 94.75 92.72 90.59 88.48 86.57 84.55 82.53 65.37 50.35 36.65 24.20 12.64 1.99 -7.97 74.64 73.22 70.80 69.27 66.98 63.86 62.94 62.28 60.29 60.06 58.28 57.45 56.50 55.46 55.43 55.14 54.06 53.76 53.87 52.98 53.73 52.77 52.95 53.74 53.39 53.50 56.87 60.93 62.96 63.40 61.84 59.45 55.95 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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