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VCE IC
= =
1700 V 1600 A
ABB HiPakTM IGBT Module
5SNA 1600N170100
Doc. No. 5SYA1564-01 Oct 06
* Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques
1) 2) 2) 1)
Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2
Conditions VGE = 0 V, Tvj 25 C Tc = 80 C tp = 1 ms, Tc = 80 C
min
max 1700 1600 3200
Unit V A A V W A A A s V C C C C Nm
-20 Tc = 25 C, per switch (IGBT)
20 9100 1600 3200
VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 1200 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2
13200 10 4000 150 125 125 125 6 10 3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1600N170100
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
3)
Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf
Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 1600 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min 1700 2.0 2.3
typ
max
Unit V
2.3 2.6
2.6 2.9 8 80
V V mA mA nA V C
VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 160 mA, VCE = VGE, Tvj = 25 C IC = 1600 A, VCE = 900 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 1600 A, RG = 0.82 , VGE = 15 V, L = 50 nH, inductive load VCC = 900 V, IC = 1600 A, RG = 0.82 , VGE = 15 V, L = 50 nH, inductive load VCC = 900 V, IC = 1600 A, VGE = 15 V, RG = 0.82 , L = 50 nH, inductive load VCC = 900 V, IC = 1600 A, VGE = 15 V, RG = 0.82 , L = 50 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
-500 4.5 14.6 152 14.6 6.4 290 300 175 190 1050 1140 150 170 380
500 6.5
nF
ns ns ns ns
Turn-on switching energy
Eon
mJ 530 460 mJ 590 7200 15 A nH m
Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip
3) 4)
Eoff ISC L CE RCC'+EE'
tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1200 V, VCEM CHIP 1700 V TC = 25 C TC = 125 C
0.10 0.13
Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 2 of 9
5SNA 1600N170100
Diode characteristic values
Parameter Forward voltage
6)
5)
Symbol VF Irr Qrr trr Erec
Conditions IF = 1600 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 900 V, IF = 1600 A, VGE = 15 V, RG = 0.82 L = 50 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min
typ 1.65 1.7 1090 1400 390 690 620 830 280 480
max 2.0 2.0
Unit V A C ns mJ
Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
5) 6)
Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level
Thermal properties
Parameter IGBT thermal resistance junction to case
7)
Symbol Rth(j-c)IGBT Rth(j-c)DIODE
2)
Conditions
min
typ
max
Unit
0.011 K/W 0.018 K/W 0.012 0.024 K/W K/W
Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink
2)
Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Rth(c-s)DIODE Diode per switch, grease = 1W/m x K
7)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties
Parameter Dimensions Clearance distance in air Surface creepage distance Mass
7)
7)
Symbol LxW da ds m
x
Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:
min 19 19 32 32
typ
max
Unit mm mm mm
H Typical , see outline drawing
130 x 140 x 38
920
g
Thermal and mechanical properties according to IEC 60747 - 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 3 of 9
5SNA 1600N170100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 4 of 9
5SNA 1600N170100
3200 2800 2400 2000 IC [A] IC [A] 1600 1200 800 400 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5
3200 VCE = 25 V 2800 25 C 125 C 2400 2000 1600 1200 125 C 800 25 C 400 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V]
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
3200 17V 2800 2400 2000 IC [A] 1600 1200 800 400 Tvj = 25 C 0 0 1 2 3 VCE [V] 4 5 6 15V 13V 11V 9V IC [A]
3200 17V 2800 2400 2000 1600 1200 800 400 Tvj = 125 C 0 0 1 2 3 VCE [V] 4 5 6 15V 13V 11V 9V
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 5 of 9
5SNA 1600N170100
1.6 1.4 1.2 1.0 Eon, Eoff [J] 0.8 0.6 0.4 0.2
Esw[mJ] = 1.63 x 10-4 x IC2 +0.275 x I C + 258
4.0 VCC = 900 V VCEM 1700 V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 50 nH Eon, Eoff [J] 3.5 3.0 2.5 Eon 2.0 1.5 1.0 Eoff 0.5 0.0 0 1000 2000 IC [A] 3000 4000 0 1 2 3 4 5 6 7 8 9 10 11 12 13 RG [ohm] VCC = 900 V VCEM 1700 V IC = 1600 A VGE = 15 V Tvj = 125 C L = 50 nH
Eoff
Eon
0.0
Fig. 5
Typical switching energies per pulse vs collector current
Fig. 6
Typical switching energies per pulse vs gate resistor
10
10 VCC = 900 V VCEM 1700 V IC = 1600 A VGE = 15 V Tvj = 125 C L = 50 nH td(on), tr, td(off), tf [s]
td(off)
td(off) td(on), tr, td(off), tf [s] 1 td(on) tf 0.1 tr VCC = 900 V VCEM 1700 V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 50 nH 1000 2000 IC [A] 3000 4000
td(on) 1 tr
tf
0.01 0
0.1 0 1 2 3 4 5 6 7 8 9 10 11 12 13
RG [ohm]
Fig. 7
Typical switching times vs collector current
Fig. 8
Typical switching times vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 6 of 9
5SNA 1600N170100
1000
20
VCC = 900 V Cies
100
15
VCC = 1300 V Coes VGE [V] VGE = 0 V fOSC = 1 MHz VOSC = 50 mV
1 0 5 10 15 20 VCE [V] 25 30 35 C [nF]
10
10
Cres
5
IC = 1600 A Tvj = 25 C 0 0 2 4 6 Qg [C] 8 10 12
Fig. 9
Typical capacitances vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5 VCC 1200 V, Tvj = 125 C VGE = 15 V, RG = 0.82 ohm 2
1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 VCE [V] 1500 2000
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 7 of 9
5SNA 1600N170100
1800 1600 1400 Erec [mJ], Irr [A], Qrr [C] 1200 1000 800 Erec 600 400 200
Erec [mJ] = -4 x 10 x I F + 0.314 x I F + 95
-5 2
800 VCC = 900 V RG = 0.82 ohm Tvj = 125 C L = 50 nH Irr 700 600 Erec [mJ], Qrr [C] 500
RG = 0.82 RG = 0.56
1600 VCC = 900 V IC = 1600 A Tvj = 125 C L = 50 nH Irr 1400 1200 1000 Qrr
RG = 1.2
Qrr
400 300 200 100 0
RG = 12 RG = 4.7 RG = 2.2
800 600 400 200 0
Erec
0 0 1000 2000 IF [A] 3000 4000
0
1
2
RG = 6.8
3
4
5
6
7
8
9 10 11
di/dt [kA/s]
Fig. 12
Typical reverse recovery characteristics vs forward current
Fig. 13
Typical reverse recovery characteristics vs di/dt
3200 2800 25C 2400 125C 2000 IF [A] 1600 1200 IR [A]
3600 3200 2800 2400 2000 1600 1200 VCC 1200 V di/dt 8 kA/s Tvj = 125 C
800 400 0 0 0.5 1 VF [V] 1.5 2 2.5
800 400 0 0 500 1000 VR [V] 1500 2000
Fig. 14
Typical diode forward characteristics, chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06 page 8 of 9
Irr [A]
5SNA 1600N170100
0.1
Analytical function for transient thermal impedance:
Zth(j-c) Diode Zth(j-c) [K/W] IGBT, DIODE
0.01 Zth(j-c) IGBT
Z th (j-c) (t) = R i (1 - e -t/ i )
i =1
2 1.8 20.3 2.89 29.6 i 1 7.59 202 12.6 210 3 0.743 2.01 1.3 7.01 4 0.369 0.52 1.26 1.49
IGBT
n
Ri(K/kW) i(ms) Ri(K/kW) i(ms)
0.001
0.0001 0.001 0.01 0.1 t [s] 1 10
Fig. 16
Thermal impedance vs time
For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
DIODE
Doc. No. 5SYA1564-01 Oct 06

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