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| D60VC20 ... D60VC120 D60VC20 ... D60VC120 Silicon-Twin-Rectifiers Silizium-Doppeldiode Version 2005-04-26 6.3 0.8 21.61 Nominal current Nennstrom Alternating input voltage Eingangswechselspannung Plastic case with alu-bottom Kunststoffgehause mit Alu-Boden Weight approx. Gewicht ca. 0.2 60 A 60...800 V 28.5 x 28.5 x 10 [mm] 23 g 100.2 Type 24.30.2 6.2 O 5.2 Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose im Karton Dimensions - Mae [mm] Maximum ratings Type Typ D60VC20 D60VC40 D60VC60 D60VC80 D60VC100 D60VC120 Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 200 400 600 800 1000 1200 28.5 Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 1) 200 400 600 800 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Isolation voltage terminals to case Isolationsspannung Anschlusse zum Gehause Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur per diode 'pro Diode f > 15 Hz TA = 25C TA = 25C t = 1 min IFAV IFRM IFSM i2t VISO Tj TS 60 A 2) 120 A 2) 450/500 A 1000A2s 2000 V -50...+150C -50...+150C 1 2 Per diode - Pro Diode Max. case temperature TC = 100C - Max. Gehausetemperatur TC = 100C http://www.diotec.com/ (c) Diotec Semiconductor AG 1 D60VC20 ... D60VC120 Characteristics Forward voltage Durchlass-Spannung Leakage current - Sperrstrom Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Device layout Innerer Aufbau 10-32 UNF M5 Tj = 25C Tj = 25C IF = 60 A VR = VRRM VF IR RthJC Kennwerte < 1.1 V 1) < 100 A < 0.6 K/W 18 10% lb.in 2 10% Nm For grey colored diodes only blocking characteristics are valid Fur die grau gezeichneten Dioden gelten nur die Sperreigenschaften 120 [%] 100 103 [A] 10 2 Tj = 125C 80 Tj = 25C 60 10 40 1 20 IFAV 0 0 TC 50 100 150 [C] IF 10 -1 450a-(60a-1,1v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current vs. temp. of the case Durchlastrom in Abh. v. d. Gehausetemperatur Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Per diode - Pro Diode http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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