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AEGIS
SEMICONDUTORES LTDA.
A5A:900.XX
VOLTAGE RATINGS
Part Number A5A:900.24 A5A:900.26 A5A:900.28 A5A:900.30 A5A:900.32 A5A:900.34 A5A:900.36 A5A:900.38 A5A:900.40 A5A:900.42 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175OC 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 TJ = -40 to 0 O C 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175OC 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 700 125 1400 10.96 IFSM Max. Peak non-rep. surge current 11.94 kA 13.03 14.20 550 I2t Max. I2t capability 599 778 848 It
2 1/2
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 175 C, rated VRRM applied after surge.
O Initial T J = 175 C, no voltage applied after surge. O O
C C A C A
IF(RMS) Nom. RMS current
O Initial T J = 175 C, rated VRRM applied after surge.
kA2s
t = 8.3 ms t = 10ms
O Initial T J = 175 C, no voltage applied after surge.
Max. I t
2 1/2
capability
t = 8.3 ms O Initial T J = 175 C, no voltage applied after surge. kA2s1/2 N.m I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
9270 1550
AEGIS
SEMICONDUTORES LTDA.
A5A:900.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.40 --------20 --------87(3) TO-200AB MAX. UNITS 2.2 0.951 0.853 0.549 0.205 85 0.035 0.039 0.04 0.015 --O O O
TEST CONDITIONS Initial T J = 25OC, 50-60Hz half sine, Ipeak = 2199A. TJ = 175OC Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 OC. Max. rated VRRM
V V mW mA
C/W DC operation, double side C/W 180O sine wave, double side
C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Double side OC/W cooled. -----
g(oz.)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 0
*Sinusoidal waveform
Maximum Allowable Case Temperature
170 160 150 140 130 120
30
110 100 90 80 0 200 400
60 90 120 180
30 60 90 120 180
DC
200
400
600
800
1000
600
800
1000
1200
1400
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:900.XX
Maximum Average Forward Power Loss
16000
30
20000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
14000 12000 10000 8000 6000 4000
15000
10000
60
60
90
90 120 180
5000
120 180
2000 0 0 200 400 600 800 1000 1200
DC
0 0 200 400 600 800 1000 1200 1400 1600
*Sinusoidal waveform
1400
1600
Average Forward Curretn (A)
*Rectangular waveform
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
100
Transient Thermal Impedance ZthJC
1000
Transient Thermal Impedance ZthJC (C/W)
1.5 2.0 2.5 3.0 3.5
Instantaneous Forward Current (A)
10
125C
25C
100 0.5 1.0
1 1 10 100 1000 10000
Instantaeous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:900.XX
TO-200AB
Fig. 7 - Outline Characteristics

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