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| Ordering number : EN7712A 2SJ655 SANYO Semiconductors DATA SHEET 2SJ655 Features * * * * * P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings --100 20 --12 --48 2.0 25 150 --55 to +150 144 --12 Unit V V A A W W C C mJ A Note : *1 VDD=--50V, L=1mH, IAV=--12A *2 L1mH, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS= 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-6A ID=--6A, VGS=-10V ID=--6A, VGS=-4V Ratings min --100 --1 10 --1.2 9 13 100 136 136 190 --2.6 typ max Unit V A A V S m m Marking : J655 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72506 MS IM TC-00000066 / 61504QB TS IM TA-3854 No.7712-1/5 2SJ655 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=--12A VDS=--50V, VGS=-10V, ID=--12A VDS=--50V, VGS=-10V, ID=--12A IS=--12A, VGS=0V Ratings min typ 2090 155 108 17 95 187 95 41 7 9 --0.88 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7508-003 Switching Time Test Circuit VIN VDD= --50V 10.0 3.2 3.5 7.2 4.5 2.8 0V --10V VIN ID= --6A RL=8.33 D 16.0 PW=10s D.C.1% VOUT 18.1 G 1.6 1.2 0.75 14.0 0.7 5.6 2SJ655 P.G 50 S 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Avalanche Resistance Test Circuit L 50 RG 2SJ655 0V --10V 50 VDD No.7712-2/5 2SJ655 --25 ID -- VDS Tc=25C --1 0V --8 V --25 ID -- VGS Tc= -25C --3.5 V --4 --20 --20 --6 V Drain Current, ID -- A --15 Drain Current, ID -- A --15 --10 --10 --5 --5 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --25 C 25 C Tc= 7 VGS= --3V 5C --3.0 25C --4.0 75 C --4.5 VDS= --10V --5.0 Drain-to-Source Voltage, VDS -- V 300 IT05374 250 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT05375 RDS(on) -- Tc ID= --6V Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 200 150 150 Tc=75C -4 V =V GS V , --10 -6 A =S= ID , VG 6A = -ID 100 25C 100 --25C 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT05376 --100 7 5 3 2 Case Temperature, Tc -- C IT05377 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS= --10V 2 10 7 5 3 2 1.0 7 5 --0.1 Source Current, IS -- A 3 --10 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 1000 7 7 --10 2 IT05378 --0.01 7 5 3 2 --0.001 --0.3 Tc = --0.6 C 25 C --25 Tc= C 75 C 75 --1.0 7 5 3 2 C --25 C --0.9 25 --1.2 IT05379 SW Time -- ID VDD= --50V VGS= --10V td(off) 5 3 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 Ciss 2 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 tf tr Coss Crss td(on) 100 7 0 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --5 --10 --15 --20 --25 --30 IT05381 Drain Current, ID -- A IT05380 Drain-to-Source Voltage, VDS -- V No.7712-3/5 2SJ655 --10 --9 VGS -- Qg VDS= --50V ID= --12A Drain Current, ID -- A --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --48A <10s 10 10 s 0 s Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 40 45 ID= --12A 1m s 10 DC Operation in this area is limited by RDS(on). 10 ms s 0m op era tio n --0.1 --1.0 Tc=25C Single pulse 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC 2.5 IT05382 35 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 7 --100 2 IT05383 PD -- Tc Allowable Power Dissipation, PD -- W 30 2.0 25 1.5 20 1.0 15 10 0.5 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 120 IT05384 Case Temperature, Tc -- C IT05385 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- C No.7712-4/5 2SJ655 Note on usage : Since the 2SJ655 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.7712-5/5 |
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