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DFM600BXS17-A000
Fast Recovery Diode Module
PDS5798-1.2 June 2007 (LN25343)
FEATURES
* * * * Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop Isolated Copper Base plate
KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1700V 2.0V 600A 1200A
APPLICATIONS
* * * * * * Chopper Diodes Boost and Buck Converters Free-wheel Circuits Snubber Circuit Resonant Converters Multi-level Switch Inverters
The DFM600BXS17-A000 is a single 1700V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Circuit diagram
ORDERING INFORMATION
Order As: DFM600BXS17-A000
Note: When ordering, please use the whole part number. Outline type code: B (See package details for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DFM600BXS17-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise
Symbol VRRM IF IFM
Parameter Repetitive peak reverse voltage Forward current Max. forward current Surge (non-repetitive) forward current I2t value fuse current rating Maximum power dissipation Isolation voltage - per module Tvj = 125C
Test Conditions
Max. 1700 600 1200
Units V A A
DC, Tcase = 65C, Tvj = 125C Tcase =110 C, tp = 1ms
IFSM I2 t Pmax Visol
3674
A kA2s W V
VR = 0, tP = 10ms, Tvj = 125C Tcase = 25C, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz
67.5 2000 4000
THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Al2O3 Copper 20mm 11mm 425
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
Thermal resistance
Continuous dissipation - junction to case
-
-
50
C/kW
Rth(c-h)
Thermal resistance - case to heatsink
Mounting torque 5Nm (with mounting grease)
-
-
15
C/kW
Tj Tstg -
Junction temperature Storage temperature range Screw torque
Mounting - M6 Electrical connections - M6
-40 3 2.5
-
125 125 5 5
C C Nm Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600BXS17-A000
SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise.
Symbol IRM VF Parameter Peak reverse current Forward voltage Test Conditions VR = 1200V, Tvj = 125C IF = 600A IF = 600A, Tvj = 125C LM Inductance Min. Typ. 2.0 2.05 20 Max. 15 Units mA V V nH
DYNAMIC ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise.
Symbol trr Irr Qrr Erec Parameter Reverse recovery time IF = 600A, Peak reverse recovery current dIF/dt = 4500A/s, Reverse recovery charge VR = 900V Reverse recovery energy 105 mJ 150 C 345 A Test Conditions Min. Typ. 1.4 Max. Units s
Tcase = 125C unless stated otherwise.
Symbol trr Irr Qrr Erec Parameter Reverse recovery time Peak reverse recovery current Reverse recovery charge Reverse recovery energy IF = 600A, dIF/dt = 3800A/s, VR = 900V Test Conditions Min. Typ. 2.0 330 255 150 Max. Units s A C mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600BXS17-A000
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
1600
VF is measured at power busbars and not the auxiliary terminals
100
1400
Diode
1200
Foward current, F - (A) I
Tj = 25 uC
Transient thermal impedance,th (j-c) - ( Z C/kW )
1000 Tj = 125 uC
10
800
600
1
400
200
Diode
Ri (uC/KW) i (ms)
1 1.14 0.10
2 6.32 3.21
3 18.56 38.58
4 22.51 113.97
0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, V - (V) F Diode typical forward characteristics
3.0
3.5
0.1 0.001
0.01
0.1 Pulse width, p - (s) t
1
10
Fig.3 Diode typical forward characteristics
Fig.4 Transient thermal impedance
2500
900 800
2000
700
Power dissipation - (W)
Forward current, F - (A) I
25 50 75 100 125
600 500 400 300
1500
1000
500
200 100
0 0
Case temperature, cT C -
0 0
25
50 75 Case temperature, cT ( - C)
100
125
Fig.5 Power dissipation
Fig.6 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600BXS17-A000
SEMICONDUCTOR
800
700
Reverse recovery current, Irr - (A)
600
500
400
300
200
1000 Tj = 125uC 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000
Fig.7 RBSOA
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600BXS17-A000
SEMICONDUCTOR
PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 475g Module outline type code: B
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600BXS17-A000
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
(c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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