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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 DESCRIPTION *High Power Gain *High Current Gain Bandwidth Product *Low Noise Figure APPLICATIONS *Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 200 mA PC Collector Power Dissipation @TC=25 2.25 W TJ Junction Temperature 175 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CES V(BR)CBO V(BR)EBO ICBO hFE fT PG PG Cre S21e2 VO PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Power Gain Power Gain Feedback Capacitance Insertion Power Gain Output Voltage CONDITIONS IC= 0.1mA ; IB= 0 IC= 0.1m A ; IE= 0 IE= 0.1m A ; IC= 0 VCB= 10V; IE= 0 IC= 70mA ; VCE= 8V IC= 70mA ; VCE= 12V; f= 1GHz IC= 70mA;VCE= 12V; f= 900MHz IC= 70mA;VCE= 12V; f= 2GHz IE= 0 ; VCB= 12V; f= 1MHz IC= 70mA ; VCE= 12V; f= 1GHz note 60 7 11 5.5 0.8 10 MIN 15 20 3 BFQ591 TYP. MAX UNIT V V V 0.1 250 A GHz dB dB pF dB mV 700 Note: dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured @ f(p+q+r) = 793.25 MHz. isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 isc Websitewww.iscsemi.cn 4 |
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