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| SMD Type Transistors IC Complementary MOSFET Half-Bridge (N- and P-Channel) KI4501DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)8 Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec TJ, Tstg IDM IS PD Symbol VDS VGS ID N-Channel 30 20 9 7.4 30 1.7 2.5 1.6 -55 to 150 P-Channel -8 8 6.2 5.0 20 -1.7 Unit V V A A A A W W Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 38 73 17 Max 50 95 22 Typ 40 73 20 P-Channel Max 50 95 26 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI4501DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 8 V VDS = 24V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -6.4V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 VDS = -6.4V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 9A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -6.2A VGS = 4.5 V, ID = 7.4A VGS = -2.5 V, ID = -5.2A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 15 V, ID = 9A VDS = -15 V, ID = -6.2A IS = 1.7A, VGS = 0 V IS = -1.7A, VGS = 0 V N-Channel VDS = 15 V, VGS = 5V, ID = 9A P-Channel VDS = -4 V, VGS = -5 V, ID = -6.2A N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 P-Channel VDD = -4 V, RL = 4 ID= -1 A, VGEN = -4.5 V, Rg = 6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.7 A, di/dt = 100 A/ s N-Ch P-Ch 30 -20 Min 0.8 -0.45 Transistors IC Typ Max Unit V 100 100 1 -1 5 -5 A A 0.015 0.018 0.034 0.042 0.022 0.027 0.048 0.060 20 14 0.71 -0.70 4.5 15 3.3 3.0 6.6 2.0 13 20 9 50 35 110 17 60 35 60 20 40 18 100 50 220 30 120 70 100 ns 1.1 -1.1 20 25 pC S V nA 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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