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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Open base CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current SEM GE OND IC TOR UC VALUE -160 -160 -5 -12 -4 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 125 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB656 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -0.1 mA IEBO Emitter cut-off current hFE fT DC current gain C VEB=-5V; IC=0 -0.1 mA IC=-1A ; VCE=-5V 60 Transition frequency hFE Classifications B 60-120 HAN INC 100-200 SEM GE IC=-1A ; VCE=-10V OND IC TOR UC 200 20 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB656 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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