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  Datasheet File OCR Text:
 SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package .
2 1
KDV142EL
SILICON EPITAXIAL PIN TYPE DIODE
] (Max.)
A F
E
E
G
B
D
DIM A B C D E F G
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA
C
MILLIMETERS _ 0.6 + 0.03 _ 0.3 + 0.03 _ 0.28 + 0.03 _ 0.25 + 0.02 _ 0.18 + 0.02 Typ 0.37 _ 0.025 + 0.015
ELP-2
www..com
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.35 1.3 UNIT A V pF
2005 .10. 10
Revision No : 0
1/2
KDV142EL
IF
FORWARD CURRENT IF (A)
10
-2
- VF
10
-11
I R - VR
REVERSE CURRENT IR (A)
10-4
10-6
10
-12
10
-8
10-10
10-12
10 0 0.2 0.4 0.6 0.8 1.0
-13
0
20
40
60
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
CT
TOTAL CAPACITANCE CT (pF)
1.0
- VR
SERIES RESISTANCE rS ()
f=1MHz
rs
10
2
- IF
f=100MHz
10
1
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10
0
0.1 0.1
10 1.0 10
-1
10
-4
10
-3
10
-2
FORWARD VOLTAGE VR (V)
FORWARD CURRENT IF (A)
SERIES RESISTANCE PARALLEL rp ()
rP
10 10 10 10 10 10
5 4
- VF
f=100MHz
3
2
1
0
0
0.2
0.4
0.6
0.8
FORWARD VOLTAGE VF (V)
2005. 10. 10
Revision No : 0
2/2


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