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| SMD Type Power MOSFET KTHC5513 IC IC Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS(on) in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Drain current Continuous *1 TA = 25 TA = 85 t 5 IDM PD t 5 TJ, Tstg TL R JA Symbol VDSS VGSS N-Channel 20 12 2.9 P-Channel Unit V V -2.2 -1.6 -3 -9 1.1 2.1 -55 to 150 260 110 60 /W A W W A ID 2.1 3.9 12 Drain current Pulsed t = 10 s *1 Total power dissipation Operating and Storage Temperature Range Lead Temperature for Soldering Purposes Junction-to-Ambient *1 Steady State t 5 *1 Surface Mounted on FR4 board using 1 in sq pad size www.kexin.com.cn 1 SMD Type KTHC5513 Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Symbol V(BR) DSS Testconditons ID=250 A,VGS=0V ID=-250 A,VGS=0V VDS=16V,VGS=0V Zero gate voltage drain current IDSS VDS=16V,VGS=0V,TJ = 85 VDS=-16V,VGS=0V VDS=-16V,VGS=0V,TJ = 85 Gate?to?Source Leakage Current Gate threshold voltage *1 Static drain-source on-state resistance *1 Static drain-source on-state resistance *1 Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate?to?Source Gate Charge Gate?to?Drain "Miller" Charge Turn-on delay time Rise time Turn-off delay time *1 Fall time *1 IGSS VGS (th) RDS (on) RDS (on) gFS Ciss Coss Crss QG(TOT) QGS QGD td (on) tr td (off) tf VDS = 0 V, VGS = 12 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS=-10V,VGS=0V,f=1MHz VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS = -10 V, ID =-2.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS =-10 V, ID =-2.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS =-10 V, ID =-2.2 A ID=2.9A,VDD=16V ID=-2.2A,VDD=-16V N-Channel VGS=4.5V,RG=2.5 *2 P-Channel VGS=-4.5V,,RG=2.5 *2 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS=2.6 A,VGS=0V IS=-2.1 A,VGS=0 V N-Ch P-Ch 0.6 -0.6 0.058 0.13 6.0 6.0 180 185 80 95 25 30 2.6 3.0 0.6 0.5 0.7 0.9 5.0 7.0 9 13 10 33 3.0 27 0.8 -0.8 10 12 18 25 20 50 6.0 40 1.15 -1.15 4.0 6.0 Min 20 -20 1 5 -1 -5 100 100 1.2 -1.2 0.08 0.155 0.077 0.115 0.200 0.240 Typ Max IC IC Unit V A nA V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID=2.9A,VGS=4.5A ID=2.3A,VGS=2.5V ID=-2.2A,VGS=-4.5V ID=-1.7A,VGS=-2.5V ID=2.9A,VDS=10V ID=-2.2A,VDS=-10V N-Channel VDS=10V,VGS=0V,f=1MHz S pF pF pF nC ns ns ns ns Forward Voltage *1 VSD V 2 www.kexin.com.cn SMD Type KTHC5513 Electrical Characteristics Ta = 25 Parameter Symbol trr N-Channel Reverse Recovery Time ta VGS = 0 V,dIS/dt = 100 A/ s,IS=1.5 A Testconditons N-Ch P-Ch N-Ch P-Ch tb P-Channel VGS = 0 V,dIS/dt = 100 A/ Reverse Recovery Storage Charge *1 Pulse Test: Pulse Width 250 QRR s, Duty Cycle 2%. s,IS=?1.5A N-Ch P-Ch N-Ch P-Ch Min Typ 12.5 32 9 10 3.5 22 6 15 Max IC IC Unit ns C *2 Switching characteristics are independent of operating junction temperature. www.kexin.com.cn 3 |
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