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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2556 2SC2556A
DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL PARAMETER
IN

VCBO
Collector-base voltage
CHA
E SEM NG
2SC2556 2SC2556A 2SC2556 2SC2556A
OND IC
CONDITIONS
TOR UC
VALUE 130 V 180 40 V 50 UNIT
VCEO
Collector- emitter voltage
VEBO IC ICM PC Tj Tstg
Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature
Open collector
5 1 1.5
V A A W ae ae
TC=25ae
1.2 150 -55 +150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS
2SC2556 2SC2556A
SYMBOL
MIN
TYP.
MAX
UNIT
2SC2556 V(BR)CEO Collector-emitter breakdown voltage 2SC2556A IC=2mA ;IB=0
40 V 50
2SC2556 V(BR)CBO Collector-base breakdown voltage 2SC2556A IC=10|I A ;IE=0
130 V 180
V(BR)EBO
Emitter-base breakdown voltage
IE=10|I
A ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=500mA ;IB=50mA
0.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
hFE-1
hFE-2
IN
DC current gain
DC current gain

IC=1A ; VCE=0.5V
COB
Output capacitance
fT
Transition frequency
CHA
E SEM NG
IC=0.5A ; VCE=2V
OND IC
150 150
TOR UC
350 30 200
0.1
|I
A
IE=0; VCB=20V;f=1MHz
pF
IC=50mA ; VCE=10V
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2556 2SC2556A

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3


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