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| SMD Type High-Voltage Switching Applications 2SC3647 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 120 100 6 2 3 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = 100V , IE = 0 VEB = 4V , IC = 0 120 100 6 100 0.22 0.85 120 25 80 See Test Circuit. 750 40 ns 400 0.6 1.2 V V MHz pF Min Typ Max 100 100 Unit nA nA V V V V(BR)CBO IC = 10uA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10uA , IC = 0 hFE VCE = 5V , IC = 100mA VCE(sat) IC = 1A , IB = 100mA VBE(sat) IC = 1A , IB = 100mA fT Cob ton tstg tf VCE = 10V , IC = 100mA VCB = 10V , IE = 0 , f = 1MHz www.kexin.com.cn 1 SMD Type 2SC3647 Test Circuit Transistors hFE Classification Marking Rank hFE 100 R 200 140 CC S 280 200 T 400 Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SC3647 Transistors www.kexin.com.cn 3 |
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