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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6360 Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER ANG Open base Fig.1 simplified outline (TO-3) and symbol INCH Base current Collector-base voltage Collector-emitter voltage SEM E CONDITIONS Open emitter OND IC TOR UC VALUE 120 100 7 12 24 4 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current Collector current-peak Total Power Dissipation Junction temperature Storage temperature TC=25ae 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6360 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=2.4A 4.0 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.2 V ICEO Collector cut-off current VCE=100V; IB=0 VCE=120V; VBE(off)=1.5V TC=150ae VEB=7V; IC=0 2.0 2.0 10.0 5.0 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current hFE-1 hFE-2 DC current gain mA IC=6A ; VCE=4V 15 DC current gain fT Transition freuqency HAN INC SEM GE IC=12A ; VCE=4V IC=1A ; VCE=4V OND IC 5 0.2 TOR UC MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6360 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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