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GLD140G W93910 01301 ASM3P 4534CU 1N5253 MP9472 537JCW
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  Datasheet File OCR Text:
 SMD Type
Silicon PNP Epitaxia 2SA1385-Z
Transistors
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
Features
Low VCE(sat):VCE(sat)=-0.18 V TYP.
+0.2 9.70 -0.2 +0.15 5.55 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Total power dissipation Junction temperature Storage temperature * PW 10ms, duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -60 -60 -7 -5 -7 10 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Turn-on time Storage time Fall time * PW 350is, duty cycle 2%. Symbol ICBO IEBO hFE Testconditons VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 VCE = -1 V, IC = -2 A 100 200 -0.18 Min Typ Max -10 -10 400 -0.3 -1.2 140 0.08 IC = -2 A,IB1 =-IB2 = -0.2 A, RL=50U, VCC=-10V 0.55 0.18 1.0 2.5 1.0 V V MHz is is is Unit iA iA
VCE(sat) IC = -2 A, IB = -0.2 A VBE(sat) IC = -2 A, IB = -0.2 A fT ton tstg tf VCE = -10 V, IC = -0.5 A
hFE Classification
Marking hFE 100 M 200 160 L 320 200 K 400
3.80
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