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| SMD Type Silicon Schottky Barrier Diode HSU88 Diodes SOD-123 2.7 +0.1 -0.1 +0.1 0.55-0.1 Unit: mm +0.05 1.1-0.05 Low capacitance. (C=0.8pF max) Low forward voltage. Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. +0.05 0.1-0.02 +0.1 3.7-0.1 0.1max 0.50 0.35 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e V o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 10 15 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VF Conditions IF = 1 mA IF = 10 mA Reverse current Capacitance ESD-Capability (Note 1) Note 1. Failure criterion ; IR 400 nA at VR =2 V IR C VR = 2 V VR = 10 V VR =0 V, f = 1 MHz C = 200pF , Both forward and reverse direction 1 pulse. 30 Min 350 500 Typ Max 420 580 0.2 10 0.8 A pF V Unit mV Marking Marking 9 +0.1 1.6-0.1 Features www.kexin.com.cn 1 |
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