 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER INC Emitter-base voltage Collector current (DC) E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 1000 450 9 6 15 4 8 100 150 -65~150 UNIT V V V A A A A W ae ae Open collector Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 1.25 62.5 ae UNIT ae /W /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1.5A ;IB=0.15A TC=125ae IC=3A ;IB=0.6A TC=125ae IC=1.5A; IB=0.15A IC=3A; IB=0.6A VCES=RatedVCES; VEB=0 TC=125ae VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=1V MIN 450 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 MJE18006 TYP. MAX UNIT V 0.6 0.65 0.7 0.8 1.2 1.3 0.1 0.5 0.1 0.1 V V V V ICES Collector cut-off current mA mA mA DC current gain DC current gain DC current gain DC current gain CHA IN Transition frequency Turn-on time Turn-off time Turn-on time Turn-off time E SEM NG 10%,Pulse Width=20|I IC=1.5A ; VCE=1V OND IC 14 6 TOR UC 0.1 34 14 75 11 IC=10mA ; VCE=5V 10 MHz pF IC=0.5A ; VCE=10V;f=1.0MHz IE=0;VCB=10V;f=1.0MHz s Collector outoput capacitance Switching times resistive load,Duty CycleU ton toff ton toff VCC=300V ,IC=3A IB1=0.6A; IB2=1.5A 90 1.7 0.2 1.2 180 2.5 0.3 2.5 |I |I |I ns s s s VCC=300V ,IC=1.3A IB1=0.13A; IB2=0.65A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE18006 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 |
Price & Availability of MJE18006
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |