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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD555 DESCRIPTION *With TO-3 package *High power dissipation *Complement to type 2SB600 APPLICATIONS *For high speed ,high current ,high power applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 5 10 200 150 -55~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.46 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=10A; IB=2A IC=5A; IB=0.5A VCB=250V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V 40 300 15 MIN 200 5 TYP. 2SD555 MAX UNIT V V 1.5 5.0 2.0 0.1 0.1 200 V V V mA mA pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD555 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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