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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU921
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)
APPLICATIONS *Designed for automotive ignition applications and inverter circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-peak Base Current Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
VALUE 450 400 5 10 15 5 105 150 -65~150
UNIT V V V A A A W
PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.2 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BU921
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 50mA
B
1.8
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 7A; IB= 140mA
B
1.8
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
B
2.2
V
V BE(sat)-2
Base-Emitter Saturation Voltage
IC= 7A; IB= 140mA
B
2.5 0.25 0.5 0.25
V
ICES
Collector Cutoff Current
VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 150 VCE= 400V; IB= 0
mA
ICEO
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
mA
VECF
C-E Diode Forward Voltage
IF= 7A
2.5
V
isc Websitewww.iscsemi.cn


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Price & Availability of BU921
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Part # Manufacturer Description Price BuyNow  Qty.
BVBU921608
72079945
POBCO Inc. V-Belt Pulley, White UHMW, inBin Section V Belt, 5-3/4in OD, 1/2in Bore | POBCO Inc. BVBU921608 1: USD50.4
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Component Electronics, Inc

Part # Manufacturer Description Price BuyNow  Qty.
BU921T
STMicroelectronics IN STOCK SHIP TODAY BuyNow
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