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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP48 DESCRIPTION *DC Current Gain -hFE = 30~150@ IC= 0.3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) APPLICATIONS *Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Collector Power Dissipation Ta=25 Junction Temperature Storage Temperature Range VALUE 400 300 5 1.0 2.0 0.6 40 UNIT V V V A A A PD W 2 150 -65~150 Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.125 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TIP48 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 10V 30 150 hFE-2 DC Current Gain IC= 1A; VCE= 10V 10 fT Current-Gain--Bandwidth Product IC= 0.1A; VCE= 10V 10 MHz isc Websitewww.iscsemi.cn |
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