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HAT2285WP
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G1371-0300 Rev.3.00 Apr 05, 2006
Features
* * * * Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D)
78 D1 D1 56 S1/D2 S1/D2
5678
2 G1 4 G2
4 321
S1/D2(kelvin) 1 S2 3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS2 and Schottky Barrier Diode
MOS1
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings MOS1 30 20 14 56 14 8 150 -55 to +150 MOS2 & SBD 30 12 22 88 22 15 150 -55 to +150 Unit V V A A A W
C C
Notes: 1. PW 10 s, duty cycle 1 % 2. Tc = 25C
Rev.3.00 Apr 05, 2006 page 1 of 9
HAT2285WP
Electrical Characteristics
* MOS1 (Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.0 -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 19 27 18 630 155 57 4.6 2.2 1.2 7 30 35 3.6 0.91 18 Max -- 0.1 1 2.5 24 40 -- -- -- -- -- -- -- -- -- -- -- 1.19 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VGS = 10 V Note3 ID = 7 A, VGS = 4.5 V Note3 ID = 7 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 4.5 V, ID = 14 A VGS =10 V, ID = 7 A, VDD 10 V, RL = 1.42 , Rg = 4.7 IF = 14 A, VGS = 0 Note3 IF =14 A, VGS = 0 diF/ dt = 100 A/s
* MOS2 & Schottky Barrier Diode (Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VF trr Min 30 -- -- 1.4 -- -- 24 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 14 15 40 1930 300 130 18 5.8 4.5 10 20 45 4.0 0.5 16 Max -- 0.1 1 2.5 18 23 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A mA V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID =1 mA ID =11 A, VGS = 10 V Note3 ID = 11 A, VGS = 4.5 V Note3 ID = 11 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 4.5 V, ID = 22 A VGS = 10 V, ID = 11 A, VDD 10 V, RL = 0.91 , Rg = 4.7 IF = 3.5 A, VGS = 0 Note3 IF = 22 A, VGS = 0 diF/ dt = 100 A/s
Rev.3.00 Apr 05, 2006 page 2 of 9
HAT2285WP
Electrical Characteristics
* MOS1
Power vs. Temperature Derating
16 1000 100
10 s 1 m 100 s PW s DC = Op 10 era ms tio n
Maximum Safe Operation Area
Channel Dissipation Pch (W)
12
Drain Current ID (A)
10
8
1
4
Operation in this area is 0.1 limited by RDS(on) Tc = 25C 0.01 1 shot Pulse 0.1 1
0
50
100
150
200
10
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 4.5 V 10 V 3.6 V 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
10
3.2 V
Drain Current ID (A)
10
VGS = 2.8 V Pulse Test 0 5 10
Tc = 75C 25C -25C 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV)
200 Pulse Test 150
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Drain Current
100
VGS = 4.5 V 10 V 10
100
ID = 5 A
50
2A 1A
0
1 0.1 1
Pulse Test 10 100
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Apr 05, 2006 page 3 of 9
HAT2285WP
Static Drain to Source on State Resistance vs. Temperature
50
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 50 Tc = -25C 20 10 5 25C 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 VDS = 10 V Pulse Test 5 10 20 50 100 75C
Pulse Test ID = 1 A, 2 A
5A
40 VGS = 4.5 V
30
20 10 V 10 0 -25
1 A, 2 A, 5 A
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100 50 10000 5000
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Capacitance C (pF)
2000 1000 500 200 100 50 20 10 0 5 10 15 20 25 30 Crss Coss Ciss
20 10 5 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
2 1 0.1
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50 ID = 14 A VDD = 25 V 10 V 5V VGS VDS 20 100
Switching Characteristics
tr
40
16
Switching Time t (ns)
50
td(off)
30
12
20 10 td(on) 5 tf 2 VGS = 10 V, VDD = 10 V Rg =4.7 , duty 1 % 0.5 1 2 5 10 20 50 100
20
8
10
VDD = 25 V 10 V 5V 4 8 12 16
4 0 20
0
1 0.1 0.2
Gate Charge Qg (nC)
Drain Current ID (A)
Rev.3.00 Apr 05, 2006 page 4 of 9
HAT2285WP
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
10 V 5V
10
VGS = 0 V, -5 V
Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD (V)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1 0.1
0.05 02 0.03 0. 1 e 0.0 puls ot h 1s 0.01 10 100
ch - c (t) = s (t) * ch - c ch - c = 15.6C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10 D= PW T
Pulse Width PW (s) Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor 10% 10% 10%
Switching Time Waveform
90%
90% td(on) tr
90% td(off) tf
Rev.3.00 Apr 05, 2006 page 5 of 9
HAT2285WP * MOS2 & Schottky Barrier Diode
Power vs. Temperature Derating
40 1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100
30
20
10
10 s 1 1 m 00 PW s DC = 1 s 10 Op 0 m era s tio n 1 Operation in this area is limited by RDS(on) 0.1
Tc = 25C 0 50 100 150 200 0.01 1 shot Pulse 0.1 1 10 100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 5V 10 V Pulse Test 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
10
2.6 V
Drain Current ID (A)
2.8 V
10
2.4 V VGS = 2.3 V
Tc = 75C 25C -25C 0 1 2 3 4 5
0
5
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV)
160 Pulse Test
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
120
VGS = 4.5 V 10 10 V
80
ID = 5 A
40
2A 1A
0
1 0.1 1 10 100
2
4
6
8
10
12
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Apr 05, 2006 page 6 of 9
HAT2285WP
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 VDS = 10 V Pulse Test 5 10 20 50 100 75C 25C Tc = -25C
Static Drain to Source on State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Temperature
50 Pulse Test 40
30
1 A, 2 A, 5 A
20
VGS = 4.5 V 1 A, 2 A, 5 A
10 0 -25
10 V
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100 50
Typical Capacitance vs. Drain to Source Voltage
10000 5000 VGS = 0 f = 1 MHz 2000 1000 500 Coss 200 100 50 20 10 100 0 5 10 15 20 25 30 Crss
20 10 5 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30
2 1 0.1
Reverse Drain Current IDR (A)
Capacitance C (pF)
Ciss
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltag VDS (V)
VGS
Switching Characteristics
Gate to Source Voltage VGS (V)
10 100 50 td(off) tr td(on)
50
ID = 22 A VDD = 25 V 10 V 5V VDS
40
8
Switching Time t (ns)
20 10 5
30
6
20
4
tf 2 VGS = 10 V, VDD = 10 V Rg =4.7 , duty 1 % 2 5 10 20 50 100
10
VDD = 25 V 10 V 5V 10 20 30 40
2
0
50
0
1 0.1 0.2 0.5 1
Gate Charge Qg (nC)
Drain Current ID (A)
Rev.3.00 Apr 05, 2006 page 7 of 9
HAT2285WP
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
10 V VGS = 0 V, -5 V 5V
10
Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1
D=1 0.5
0.2
0.3
0.1 0.1
ch - c (t) = s (t) * ch - c ch - c = 8.33C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10 D= PW T
0.05
2 0.03 0.0 e .01 puls 0 t ho 1s 0.01 10 100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90% td(on) tr
90% td(off) tf
Rev.3.00 Apr 05, 2006 page 8 of 9
HAT2285WP
Package Dimensions
Package Name WPAK-D JEITA Package Code RENESAS Code PWSN0008DB-A Previous Code WPAK-DV MASS[Typ.] 0.07
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
1.7
1.7
5.9 +0.1 -0.2
3.8 0.2
6.1 +0.1 -0.3
0.5
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 0.15
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part Name HAT2285WP-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Apr 05, 2006 page 9 of 9
Sales Strategic Planning Div.
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