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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SB696
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *High Current Capability *Wide Area of Safe Operation *Complement to Type 2SD732
APPLICATIONS *Designed for AF power amplifier applications. *Recommended for output stage of 60W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC
Emitter-Base Voltage
w w
scs .i w
VALUE -150 -120 -6 -8 -12 80
UNIT
V
.cn mi e
V
V
Collector Current-Continuous
A
ICM
Emitter Current-Peak Collector Power Dissipation @TC=25 Junction Temperature
A
PC
W
TJ
150
Tstg
Storage Temperature
-40~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB696
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -5mA; RBE= IC= -50mA; RBE=
-120
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
-120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
B
-0.6
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain--Bandwidth Product
w w
E 100-200
scs .i w
F
VCB= -80V; IE= 0
VEB= -4V; IC= 0
IC= -1A; VCE= -5V
.cn mi e
40 15
-1.5
V
-0.1
mA
-0.1
mA
320
IC= -1A; VCE= -5V
MHz
hFE Classifications C 40-80 D 60-120
160-320
isc Websitewww.iscsemi.cn


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