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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB943 DESCRIPTION *With TO-220Fa package *Large collector current IC *Low collector saturation voltage *Complement to type 2SD1268 APPLICATIONS *For power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -130 -80 -7 -3 -6 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-2A, IB=-0.1A IC=-2A, IB=-0.1A VEB=-5V; IC=0 VCB=-100V; IE=0 IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-2V IC=-0.5A; VCE=-10V 45 60 MIN -80 2SB943 SYMBOL V(BR)CEO VCEsat VBEsat IEBO ICBO hFE-1 hFE-2 fT TYP. MAX UNIT V -0.5 -1.5 -50 -10 V V A A 260 30 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-0.5A;IB1=-IB2=-50mA 0.3 1.1 0.3 s s s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB943 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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