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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package *High voltage *Fast switching APPLICATIONS *General purpose switching *Switch mode power supplies *Electronic ballasts for fluorescent lighting PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUV46 BUV46A Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUV46 BUV46A Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25 BUV46 BUV46A Open collector Open base CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 3 70 150 -65~150 V A A W V UNIT V VCEO VEBO IC IB Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUV46 IC=0.1A ;IB=0 BUV46A BUV46 BUV46A BUV46 BUV46A BUV46 BUV46A IC=2.5A ;IB=0.5A CONDITIONS SYMBOL BUV46 BUV46A MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat-1 Collector-emitter saturation voltage 1.5 IC=2A ;IB=0.4A IC=3.5A ;IB=0.7A 5.0 IC=3A ;IB=0.6A IC=2.5A; IB=0.5A 1.3 IC=2A; IB=0.4A VCE =VCEX; RBE =10 TC=125 VCE =VCEX ;VBE = -2.5 V TC=125 VEB=7V; IC=0 0.1 1.0 0.3 2.0 1.0 V VCEsat-2 Collector-emitter saturation voltage V VBEsat Base-emitter saturation voltage V ICER ICEX IEBO Collector cut-off current Collector cut-off current Emitter cut-off current mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time For BUV46A IC=2A;IB1=-IB2=0.4A;VCC=150V 1.0 3.0 0.8 s s s For BUV46 IC=2.5A;IB1=-IB2=0.5A;VCC=150V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV46 BUV46A Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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