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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *Wide Area of Safe Operation *Complement to Type 2SD2029 APPLICATIONS *Power amplifier applications *Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE -160 -160 -5 -12 -20 120 UNIT .cn mi e V V V A A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3.5 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1347 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -2.0 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -50 A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 A hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-2 Classifications Q 60-120 S 80-160 w w P 100-200 scs .i w IC= -8A; VCE= -5V IE= 0; VCB= -10V; f= 1.0MHz .cn mi e 60 20 200 400 pF IC= -0.5A; VCE= -5V 15 MHz isc Websitewww.iscsemi.cn 2 |
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