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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1371 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current-peak SEM GE Open base Open collector TC=25ae OND IC TOR UC VALUE -120 -120 -5 -6 -10 70 UNIT V V V A A PC Collector power dissipation Ta=25ae 3 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-0.5A ; VCE=-5V;f=1.0MHz 20 60 20 150 15 MIN 2SB1371 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V |I |I A A 200 hFE-2 classifications Q 60-120 S Transition frequency 80-160 pF MHz IN ANG CH P 100-200 EMIC ES DUC ON TOR 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1371 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1371 SEM GE HAN INC OND IC TOR UC 4 |
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