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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION *With TO-220C package *Complement to type 2SD866 *Low collector saturation voltage *High collector current capability APPLICATIONS *For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -7 -15 40 150 -50~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-5A; IB=-0.25A IC=-5A; IB=-0.25A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-0.5A ; VCE=-10V 45 60 30 MIN -80 2SB870 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -0.5 -1.5 -10 -50 V V A A 260 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A ; IB1=-IB2=-0.3A 0.1 0.8 0.1 s s s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB870 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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