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SMD Type HEXFET Power MOSFET KRF7494 IC IC Features High frequency DC-DC converters Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 100 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Drain-Source Voltage Operating Junction and Storage Temperature Range Junction-to-Ambient Junction-to-Drain Lead Single Pulse Avalanche Energy*3 Avalanche Current *2 *1 Pulse width 400 s; duty cycle 2%. VGS VDS TJ,TSTG R JA R JL Symbol ID ID IDM Rating 5.2 3.7 42 3 0.02 20 150 -55 to + 150 50 20 370 3.1 Unit A *1 PD W W/ V V /W /W mJ A EAS IAR *2 Repetitive rating; pulse width limited by max. junction temperature. *3 Starting TJ = 25 , L = 77mH,RG = 25 , IAS = 3.1A. www.kexin.com.cn 1 SMD Type KRF7494 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 400s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. IS ISM VSD trr Qrr ton TJ = 25 , IS = 3.1A, VGS = 0V*1 TJ = 25 , IF = 3.1A.VDD=25V di/dt = 100A/ s*1 55 140 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 10V, ID = 3.1A*1 VDS = VGS, ID = 250 A VDS = 50V, ID = 5.2A*1 VDS = 120V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125 Min 150 Typ Max Unit V 0.15 35 2.5 12 1.0 250 100 -100 36 7.5 13 15 13 36 14 1750 220 100 870 120 170 2.7 54 44 4.5 V/ m V S A RDS(on) VGS(th) gfs IDSS IGSS VGS = 20V VGS = -20V ID = 3.1A VDS = 75V VGS = 10V,*1 VDD = 100V ID = 3.1A RG =6.5 VGS=10V VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f = 1.0MHz VGS = 0V, VDS = 120V, f= 1.0MHz VGS = 0V, VDS = 0V to 120V nA nC ns pF A Body Diode) *2 42 1.3 V ns nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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