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| SSG9960 7.8A, 40V,RDS(ON) 20m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG9960 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Low on-resistance * Fast switching speed D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9960SS G1 1 S1 2 G1 3 S2 4 G2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 40 20 7.8 6.2 20 2 0.016 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SSG9960 Elektronische Bauelemente 7.8A, 40V,RDS(ON) 20m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance2 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 40 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C,ID=1mA VDS=VGS, ID=250uA VGS= 20V VDS=40V,VGS=0 VDS=32V,VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A o 0.032 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 20 32 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 25 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 nC ID=7A VDS=20V VGS=4.5V _ _ _ _ VDS=20V ID=1A nS VGS=10V RG=3.3[ RD=20[ _ _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=7A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Is ISM Min. _ _ Typ. _ _ Max. 1.3 2.3 Unit V Test Condition IS=2.3A, VGS=0V. VD=VGG=0V, VS=1.3V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) A _ _ 20 A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; t O10sec. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SSG9960 Elektronische Bauelemente 7.8A, 40V,RDS(ON) 20m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature http://www.SeCoSGmbH.com/ Fig 6. Type Power Dissipation Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SSG9960 Elektronische Bauelemente 7.8A, 40V,RDS(ON) 20m [ N-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 12. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SSG9960 Elektronische Bauelemente 7.8A, 40V,RDS(ON) 20m[ N-Channel Enhancement Mode Power Mos.FET Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 |
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