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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH315 DESCRIPTION *With TO-3PML package *High voltage *High speed switching APPLICATIONS *Horizontal deflection for color TV *Switch mode power supplies. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Operating junction temperature Storage temperature tp<5ms TC=25 tp<5ms Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 6 12 3 5 44 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=3A ;IB=0.75A IC=3A ;IB=0.75A VCE=1500V; VBE=0 VEB=5V; IC=0 IC=3A ; VCE=5V Tj=100 6 3.5 MIN 700 10 BUH315 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE TYP. MAX UNIT V V 1.5 1.3 0.2 0.1 12 V V mA mA Switching times resistive load ts tf Storage time IC=3A;IB1=0.75A;IB2=1.5A VCC=400V Fall time 0.2 s 2.4 s THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.8 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH315 Fig.2 Outline dimensions 3 |
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