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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC681 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 70V (Min) *Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS *Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage MAX 200 70 5 UNIT V Collector Current-Continuous Collector Current-Peak w w scs .i w 6 20 2 50 150 -65~150 V V .cn mi e A A A Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC681 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.6A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 tf Fall Time w w scs .i w IC= 5A; VCC= 25V .cn mi e 10 mA 0.5 s isc Websitewww.iscsemi.cn |
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