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| NTGD3149C Complementary, 20 V, +3.5/-2.7 A, TSOP-6 Dual Features Power MOSFET * * * * * * Complementary N-Channel and P-Channel MOSFET Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb-Free Device http://onsemi.com V(BR)DSS N-Ch 20 V P-Ch -20 V RDS(on) MAX 60 mW @ 4.5 V 90 mW @ 2.5 V 110 mW @ 4.5 V 145 mW @ 2.5 V ID MAX (Note 1) 3.5 A Applications -2.7 A * DC-DC Conversion Circuits * Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage N-Channel Continuous Drain Current (Note 1) P-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current (N-Ch & P-Ch) TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID Steady State t5s Steady State t5s Steady State t5s N-Ch P-Ch Symbol VDSS VGS ID Value 20 8 3.2 2.3 3.5 2.4 1.7 2.7 0.9 1.1 11 8.0 -55 to 150 0.8 260 C A C A W A Unit V V A D1 S2 G1 S1 N-CHANNEL MOSFET G2 D2 P-CHANNEL MOSFET MARKING DIAGRAM 1 TSOP-6 CASE 318G STYLE 13 CC MG G 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) CC = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTION Symbol RqJA RqJA Value 140 110 Unit C/W C/W THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) G1 S2 G2 1 2 3 6 D1 5 S1 4 D2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2008 May, 2008 - Rev. 0 1 Publication Order Number: NTGD3149C/D NTGD3149C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS N P N P N P N P Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) N P N P N P N P Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller" Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller" Charge CISS COSS CRSS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD P VGS = -4.5 V, VDS = -10 V, ID = -1.0 A RG = 6 W N VGS = 4.5 V, VDS = 10 V, ID = 2.0 A RG = 6 W P N f = 1 MHz, VGS = 0 V VDS = -10 V VDS = 10 V 387 73 43 509 76 40 4.6 0.3 0.7 1.2 5.2 0.4 1.0 1.2 5.5 nC 5.5 pF gFS N P VGS = VDS ID = 250 mA ID = -250 mA 0.4 -0.4 41 83 51 104 67 143 4.7 5.1 1.0 -1.0 60 110 90 145 150 220 S mW V IGSS N P VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -16 V TJ = 25 C TJ = 85 C VGS = 0 V ID = 250 mA ID = -250 mA 20 -20 1.1 1.1 1.0 -1.0 10 -10 100 100 nA mA mV/C V Symbol N/P Test Conditions Min Typ Max Unit VDS = 0 V, VGS = 8 V VDS = 0 V, VGS = 8 V VGS = 4.5 V , ID = 3.5 A VGS = -4.5 V , ID = -2.7 A VGS = 2.5 V , ID = 2.9 A VGS = -2.5 V , ID = -2.4 A VGS = 1.8 V , ID = 2.2 A VGS = -1.8 V , ID = -1.9 A VDS = 10 V , ID = 3.5 A VDS = -10 V , ID = -2.7 A http://onsemi.com 2 NTGD3149C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Symbol td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD tRR ta tb QRR tRR ta tb QRR P VGS = 0 V, dIS / dt = 100 A/ms N VGS = 0 V, dIS / dt = 100 A/ms N P IS = 0.8 A IS = -0.8 A P VGS = -4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W N VGS = 4.5 V, VDD = 10 V, ID = 1.0 A, RG = 6.0 W N/P Test Conditions Min Typ 6.5 3.8 16.4 2.4 7.0 5.3 33.3 29.5 0.7 -0.7 7.7 4.5 3.2 1.9 11.4 7.5 3.9 4.7 nC nC ns 1.2 -1.2 ns V Max Unit ns SWITCHING CHARACTERISTICS (Note 3) DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, TJ = 25 C 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTGD3149CT1G Package TSOP6 (Pb-Free) Shipping 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTGD3149C TYPICAL CHARACTERISTICS (N-CHANNEL) 6.0 ID, DRAIN CURRENT (A) 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 1.4 V 4.5 V 2.2 V 1.8 V 6.0 2.5 V 1.6 V ID, DRAIN CURRENT (A) 2.0 V 5.0 4.0 3.0 TJ = 125C 2.0 TJ = 25C 1.0 0 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 VDS 10 V VGS = 1.2 V 2.5 3.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. Nch On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1.0 Figure 2. Nch Transfer Characteristics 0.38 0.34 0.30 0.26 0.22 0.18 0.14 0.10 0.06 0.02 1.0 2.0 3.0 4.0 5.0 6.0 ID = 3.5 A T = 25C TJ = 25C VGS = 2.5 V VGS = 4.5 V 2.0 3.0 4.0 5.0 6.0 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. Nch On-Resistance vs. Gate Voltage 1.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 10 2.0 ID = 3.5 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. Nch On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 100 4.0 6.0 8.0 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Nch On-Resistance Variation with Temperature Figure 6. Nch Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTGD3149C TYPICAL CHARACTERISTICS (N-CHANNEL) VGS, GATE-TO-SOURCE VOLTAGE (V) 600 550 500 C, CAPACITANCE (pF) 450 400 350 300 250 200 150 100 50 0 Coss Crss 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Ciss 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 Q1 Q2 ID = 3.5 A TJ = 25C 4.0 5.0 VGS = 0 V TJ = 25C QT QG, TOTAL GATE CHARGE (nC) Figure 7. Nch Capacitance Variation 100 IS, SOURCE CURRENT (A) VDD = 10 V ID = 3.5 A VGS = 4.5 V t, TIME (ns) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Figure 8. Nch Gate-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C td(off) 10 td(on) tr 1.0 tf 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Nch Resistive Switching Time Variation vs. Gate Resistance Figure 10. Nch Diode Forward Voltage vs. Current http://onsemi.com 5 NTGD3149C TYPICAL CHARACTERISTICS (P-CHANNEL) 6.0 -ID, DRAIN CURRENT (A) 5.0 4.0 -1.6 V 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 -1.4 V -1.2 V VGS = -1.0 V 2.5 3.0 -4.5 V -2.5 V -2.0 V 6.0 TJ = 25C -ID, DRAIN CURRENT (A) -1.8 V 5.0 4.0 3.0 2.0 1.0 0 TJ = -55C TJ = 25C TJ = 125C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (V) VDS -10 V -3.0 V -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Pch On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 1.0 Figure 12. Pch Transfer Characteristics 0.38 0.34 0.30 0.26 0.22 0.18 0.14 0.10 0.06 0.02 1.0 2.0 3.0 4.0 5.0 6.0 ID = -2.7 A T = 25C TJ = 25C VGS = -2.5 V VGS = -4.5 V 2.0 3.0 4.0 5.0 6.0 -VGS, GATE-TO-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 13. Pch On-Resistance vs. Gate Voltage 1.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 10 2.0 ID = -2.7 A VGS = -4.5 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 14. Pch On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 100 4.0 6.0 8.0 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 15. Pch On-Resistance Variation with Temperature Figure 16. Pch Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 6 NTGD3149C TYPICAL CHARACTERISTICS (P-CHANNEL) -VGS, GATE-TO-SOURCE VOLTAGE (V) 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 VGS = 0 V Ciss TJ = 25C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 Q1 Q2 ID = 2.7 A TJ = 25C QT C, CAPACITANCE (pF) Coss Crss 0 2.0 4.0 6.0 8.0 10 12 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 17. Pch Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = -10 V ID = -1 A VGS = -4.5 V t, TIME (ns) 100 td(off) tf tr 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Figure 18. Pch Gate-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 10 td(on) 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 19. Pch Resistive Switching Time Variation vs. Gate Resistance Figure 20. Pch Diode Forward Voltage vs. Current http://onsemi.com 7 NTGD3149C PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTGD3149C/D |
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