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| SKIM429GD17E4HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 1200 V VGE 15 V VCES 1700 V VGES tpsc Tj Inverse diode IF Ts = 25 C Ts = 70 C Tj = 150 C Tj = 175 C Ts = 25 C Ts = 70 C 1700 595 479 420 1260 -20 ... 20 10 -40 ... 175 413 298 450 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 900 3699 -40 ... 150 700 -40 ... 125 AC sinus 50 Hz, t = 1 min 3300 V A A A A V s C A A A A A C A C V Conditions Values Unit SKiM(R) 93 Trench IGBT Modules SKIM429GD17E4HD Tj = 150 C IFnom Features IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology for thermal contacts and electrical contacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor * * * * IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) IC = 420 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C 5.2 Tj = 25 C f = 1 MHz f = 1 MHz f = 1 MHz 1.90 2.1 1.1 1 1.9 2.6 5.8 0.15 33 1.38 1.08 6660 2.7 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C 390 80 245 1005 170 180 0.079 2.25 2.3 1.2 1.1 2.5 2.9 6.4 0.45 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives VGE=VCE, IC = 16.8 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 1200 V IC = 420 A RG on = 3.6 RG off = 3.6 di/dton = 5200 A/s di/dtoff = 2200 A/s per IGBT GD (c) by SEMIKRON Rev. 4 - 11.12.2009 1 SKIM429GD17E4HD Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 420 A Tj = 125 C di/dtoff = 5990 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode min. typ. 1.7 1.6 1.1 0.9 1.3 1.8 500 140 99 max. 1.9 1.8 1.3 1.1 1.3 1.8 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 420 A VGE = 0 V chip VF0 SKiM(R) 93 Trench IGBT Modules SKIM429GD17E4HD IRRM Qrr Err Rth(j-s) Module LCE RCC'+EE' 0.169 10 15 K/W nH m m terminal-chip to heat sink (M4) Ts = 25 C Ts = 125 C 2.5 to terminals (M6) 3 0.3 0.5 4 5 1100 Features IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology for thermal contacts and electrical contacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor * * * * Ms Mt w Nm Nm Nm g K Temperature sensor R100 B100/125 TSensor = 100 C (R25 = 5 k) R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 339 4096 Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives GD 2 Rev. 4 - 11.12.2009 (c) by SEMIKRON SKIM429GD17E4HD Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 4 - 11.12.2009 3 SKIM429GD17E4HD Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 4 - 11.12.2009 (c) by SEMIKRON SKIM429GD17E4HD SKIM(R) 93 GD This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 4 - 11.12.2009 5 |
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