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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP22A DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 350V(Min) *High Switching Speed APPLICATIONS *Designed for use in converters, inverters, switchingregulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage VALUE 650 350 9 UNIT V V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak w w scs .i w 8 20 4 6 125 150 -65~150 V A .cn mi e A A A IBM PC TJ Tstg Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUP22A TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 350 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.67A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.67A B 1.5 1 2 10 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125 mA IEBO Emitter Cutoff Current hFE DC Current Gain Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time w w. w .cn mi cse is IC= 1A; VCE= 5V IC= 6A; IB1= -IB2= 0.67A VEB= 9V; IC=0 mA 25 0.5 s 3.0 s 0.3 s isc Websitewww.iscsemi.cn 2 |
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