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Thyristor Modules Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 132 PSKH 132
ITRMS ITAVM VRRM
= 2x 300 A = 2x 130 A = 800-1800 V
VRSM VDSM V 900 1300 1500 1700 1900
VRRM VDRM V 800 1200 1400 1600 1800
Type 1 Version 1 PSKT 132/08io1 PSKT 132/12io1 PSKT 132/14io1 PSKT 132/16io1 PSKT 132/18io1 Version 1 PSKH PSKH PSKH PSKH PSKH 132/08io1 132/12io1 132/14io1 132/16io1 132/18io1
2
3
67 5 4
3
671
542
Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM
Test Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 300 130 4750 5080 4230 4530 113 000 108 000 89 500 86 200 150 500 1000 120 60 8 10 -40...+125 125 -40...+125 A A A A A A A 2s A 2s A2 s A2 s A/s A/s V/s W W W V C C C V~ V~
PSKT Version 1
3 1 5 42
PSKH Version 1
i2dt
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
(di/dt)cr
TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 500 s
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight
Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins

Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches

50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
3000 3600

Mounting torque (M6) Terminal connection torque (M6) Typical including screws
2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Advantages Space and weight savings Simple mounting Improved temperature and power cycling capability Reduced protection circuits
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a
Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 300 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM
Characteristic Values 10 1.36 0.8 1.5 2.5 2.6 150 200 0.2 10 300 200 2 150 550 235 0.23 0.115 0.33 0.165 12.7 9.6 50 mA V V m V V mA mA V mA mA mA s s C A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics
TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.5 A; diG/dt = 0.5 A/s TVJ = TVJM; IT = 160 A, tP = 200 s; -di/dt = 10 A/s typ. VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/s per per per per thyristor/diode; DC current module thyristor/diode; DC current module
other values see Fig. 8/9
Creepage distance on surface Strike distance through air Maximum allowable acceleration
Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT PSKH
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
4000 ITSM A 3000 50 Hz 80 % VRRM TVJ = 45C TVJ = 125C 2000 i2t
106
A2s
105 TVJ = 45C TVJ = 125C
1000
0 0.001
0.01
0.1
s t
1
104
1 t
ms
10
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 4 i2t versus time (1-10 ms)
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Circuit B6 3xPSKT132 or 3xPSKH 132
POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
Circuit W3 3xPSKT132 or 3xPSKH 132
Z thJC(t)
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.230 0.244 0.255 0.283 0.321
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0095 0.0175 0.203 ti (s) 0.001 0.065 0.4
ZthJK(t)
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.330 0.344 0.355 0.383 0.421
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0095 0.0175 0.203 0.1 ti (s) 0.001 0.065 0.4 1.29
POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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