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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD458 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Power Dissipation: PC= 80W(Max)@TC=25 APPLICATIONS *Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage VALUE 600 UNIT V Collector-Emitter Voltage RBE= 50 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature w w scs .i w 600 400 5 5 10 2 3 80 150 -65~150 V .cn mi e V V A A A A IBM PC TJ Tstg W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICER hFE PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IE= 1mA; IC= 0 IC= 5A; IB= 1A B 2SD458 MIN 400 5 TYP. MAX UNIT V V 1.5 3.0 1.0 6.5 50 V V mA IC= 5A; IB= 1A B VCE= 600V; RBE= 50 IC= 5A; VCE= 5V hFE Classifications Q 15-50 R 6.5-30 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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