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| PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP42C APPLICATIONS Medium Power Linear Switching Application. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation c=25ae T (c)--------65W PCCollector Dissipation T A =25ae (c)---------2W VCBO Collector-Base Voltage------------100V VCEOCollector-Emitter Voltage-----------100V VE B O Emitter- Base Voltage------------5V ICCollector Current----------- ----6A I B Base Current-----------------2A 1D Base B 2D Collector C 3D Emitter E TO-220AB ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO ICEO IEBO ICES Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current - 100 - 0.7 -1 - 400 30 15 100 - 1.5 - 2.0 3.0 V mA mA |I A IC=-30mA, I =0 B VCE=-60V, IB=0 VEB=-5V, IC=0 VCE=-100V, VEB=0 VCE=-4V, IC=-0.3 A VCE=-4V, IC=-3A HFE 1(c) DC Current Gain HFE 2(c) DC Current Gain VCE(sat) VBE(on) fT Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product V V MH z IC=-6A, IB=-600mA VCE=-4V, IC=-6A VCE=-10V, IC=-500mA, f=1MHz hFE 2(c) Classification 15 75 70 100 Shantou Huashan Electronic Devices Co.,Ltd. HEP42C |
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