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SRFET
AO4724 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard product AO4724 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V (VGS = 10V) ID = 10.5A RDS(ON) < 17.5m (VGS = 10V) RDS(ON) < 29 m (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
D
SOIC-8
S S S G D D D D
G S
SRFET Soft Recovery MOSFET: Integrated Schottky Diode
TM
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current B TA=25C Power Dissipation Avalanche Current B TA=70C
B
Symbol VDS VGS
Maximum 10 Sec Steady State 30 20 10.5 7.7 6.2 80 3.1 2.0 13 25 -55 to 150 1.7 1.1 8.5
Units V V A
TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG
W A mJ C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4724
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=10.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=10.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current TJ=125C 1.3 80 14.4 21.5 22.7 23 0.4 0.5 4.8 696 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 199 81 1.2 12.4 VGS=10V, VDS=15V, ID=10.5A 6.1 2.04 2.7 2.6 VGS=10V, VDS=15V, RL=1.43, RGEN=3 IF=10.5A, dI/dt=300A/s 6.8 17 3.6 20.2 7.9 26 1.8 16 8 900 17.5 25.8 29.0 1.64 Min 30 0.1 20 100 2 Typ Max Units V mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with A=25C. The T SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev1: May. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4724
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 8V 60 6V ID(A) 4.5V ID (A) 40 4V 20 3.5V VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 26 RDS(ON) (m) 22 18 14 10 0 6 12 18 24 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 54 46 38 30 ID=10.5A 1.0E+01 1.0E+00 1.0E-01 IS (A) 125C 1.0E-02 25C 125C VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 18 5V 30 VDS=5V 24
12 125C 25C
6
800 140 80 ID=10.5A 0.5 15 7
220 140
VGS=10V
VGS=4.5V
VGS=10V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 22 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-04 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 14 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 6 0.0 0.2 0.4 0.6 0.8 1.0 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
www.aosmd.com
AO4724
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=15V ID=10.5A Capacitance (pF) 1000 800 600 400 Coss 200 0 0 Crss 5 10 15 20 25 30 Ciss
VDS (Volts) Figure 8: Capacitance Characteristics
100.0 RDS(ON) limited ID (Amps) 10.0 10ms 0.1s 1.0 TJ(Max)=150C TA=25C DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s 1ms 100s 10s Power (W)
50 40 30 20 10 0 0.001
800 140 80 0.5 15 7
TJ(Max)=150C TA=25C
220 140
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 PD OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 100 1000
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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