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| DISCRETE SEMICONDUCTORS DATA SHEET PMST3904 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 22 2004 Jan 21 NXP Semiconductors Product data sheet NPN switching transistor FEATURES * Collector current capability IC = 200 mA * Collector-emitter voltage VCEO = 40 V. APPLICATIONS * General amplification and switching. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST3906. MARKING TYPE NUMBER PMST3904 Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. MARKING CODE(1) 1A handbook, halfpage PMST3904 QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. 40 200 UNIT V mA 3 3 1 2 1 Top view 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. ORDERING INFORMATION TYPE NUMBER PMST3904 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT323 2004 Jan 21 2 NXP Semiconductors Product data sheet NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. PMST3904 MAX. 60 40 6 200 200 100 200 +150 150 +150 V V V UNIT mA mA mA mW C C C UNIT K/W 2004 Jan 21 3 NXP Semiconductors Product data sheet NPN switching transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; see Fig.2; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = Ie = 0; VCB = 5 V; f = 1 MHz IC = Ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz 60 80 100 60 30 - - 650 - - - 300 - - - - - MIN. PMST3904 MAX. 50 50 UNIT nA nA 300 - - 200 300 850 950 4 8 - 5 mV mV mV mV pF pF MHz dB Switching times (between 10% and 90% levels); see Fig.7 td tr ts tf Note 1. Pulse test: tp 300 s; 0.02. delay time rise time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - - - - 35 35 200 50 ns ns ns ns 2004 Jan 21 4 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 handbook, halfpage 500 MGU821 MGU822 handbook, halfpage 250 h FE 400 (1) IC (mA) (1) (2) (3) (4) (5) (6) (7) 200 300 150 (8) (2) (9) 200 100 (10) (3) 100 50 0 10 -1 1 10 102 I C (mA) 103 0 0 Tamb = 25 C. 2 4 6 8 10 VCE (V) VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (1) (2) (3) (4) IB = 5 mA. IB = 4.5 mA. IB = 4 mA. IB = 3.5 mA. (5) IB = 3 mA. (6) IB = 2.5 mA. (7) IB = 2 mA. (8) IB = 1.5 mA. (9) IB = 1 mA. (10) IB = 0.5 mA. Fig.3 Fig.2 DC current gain; typical values. Collector current as a function of collector-emitter voltage. handbook, halfpage 1200 MGU823 MGU824 VBE (mV) 1000 handbook, halfpage 1200 VBEsat (mV) 1000 (1) (1) (2) 800 (2) 800 600 600 (3) (3) 400 400 200 10 -1 1 10 102 I C (mA) 103 200 10 -1 1 10 102 I C (mA) 103 VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Base-emitter voltage as a function of collector current. Fig.5 Base-emitter saturation voltage as a function of collector current. 2004 Jan 21 5 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 103 handbook, halfpage MGU825 VCEsat (mV) (1) (2) (3) 102 10 10 -1 1 10 102 I C (mA) 103 IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Collector-emitter saturation voltage as a function of collector current. handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Vi R1 R2 RC Vo (probe) 450 DUT oscilloscope MLB826 Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = -1.9 V; VCC = 3 V. Oscilloscope: input impedance Zi = 50 . Fig.7 Test circuit for switching times. 2004 Jan 21 6 NXP Semiconductors Product data sheet NPN switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads PMST3904 SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Jan 21 7 NXP Semiconductors Product data sheet NPN switching transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PMST3904 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 21 8 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp9 Date of release: 2004 Jan 21 Document order number: 9397 750 12537 |
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