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| HFW5N60S_HFI5N60S Sep 2009 BVDSS = 600 V HFW5N60S / HFI5N60S 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 2.0 ID = 4.5 A D2-PAK I2-PAK HFW5N60S HFI5N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25) * TC=25 unless otherwise specified Parameter Value 600 Units V A A A V mJ A mJ V/ns W W W/ - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed (Note 1) 4.5 2.6 18 30 (Note 2) (Note 1) (Note 1) (Note 3) 210 4.5 10 4.5 3.13 100 0.8 -55 to +150 300 Power Dissipation (TC = 25) - Derate above 25 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance Characteristics Symbol RJC RJA RJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 1.25 40 62.5 /W Units * When mounted on the minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Electrical Characteristics TC=25 C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 2.25 A 2.5 --2.0 4.5 2.5 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---520 60 8.0 680 80 10.5 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 4.5 A, RG = 25 -------- 11 45 40 48 10.5 2.5 4.0 33 90 88 100 13.5 --- nC nC nC VDS = 480V, ID = 4.5 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 4.5 A, VGS = 0 V IS = 4.5 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------300 2.2 4.5 18 1.4 --A V C Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=18.9mH, IAS=4.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.5A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Typical Characteristics ID , Drain Current [A] 101 150oC 25oC 10 0 ID, Drain Current [A] -55oC * Note 1. VDS = 50V 2. 250s Pulse Test 10-1 VDS, Drain-Source Voltage [V] 2 4 6 8 10 VGS , Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 6 5 VGS = 10V 4 3 2 1 * Note : TJ = 25 C o IDR , Reverse Drain Current [A] RDS(on) , [] Drain-Source On-Resistance 101 100 150oC 25oC * Note : 1. VGS = 0V 2. 250s Pulse Test VGS = 20V 0 0 2 4 6 8 10 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 800 VGS, Gate-Source Voltage [V] 10 VDS = 120V VDS = 300V Ciss Capacitances [pF] 8 VDS = 480V 600 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz 6 4 200 Crss 2 * Note : ID = 4.5A 0 10-1 0 100 101 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Typical Characteristics (continued) 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 * Note : 1. VGS = 0 V 2. ID = 250 A 0.5 * Note : 1. VGS = 10 V 2. ID = 2.25 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 5 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 101 100 s 4 ID, Drain Current [A] 1 ms 10 ms 100 ms 100 ID, Drain Current [A] 103 3 DC 2 10 -1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 1 10-2 100 101 102 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZJC(t), Thermal Response D=0.5 0.2 10-1 0.1 0.05 0.02 0.01 single pulse * Notes : 1. ZJC(t) = 1.25 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) PDM t1 t2 101 10-2 10-5 10-4 10-3 10-2 10-1 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Fig 12. Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Package Dimension SEMIHOW REV.A0,Sep 2009 HFW5N60S_HFI5N60S Package Dimension SEMIHOW REV.A0,Sep 2009 |
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